Authors: WOJTOWICZ M LAI R STREIT DC NG GI BLOCK TR TAN KL LIU PH FREUDENTHAL AK DIA RM

Citation: M. Wojtowicz et al., 0.10-MU-M GRADED INGAAS CHANNEL INP HEMT WITH 305-GHZ FT AND 340-GHZ FMAX, IEEE electron device letters, 15(11), 1994, pp. 477-479