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Results:
1-8
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Results: 8
Authors:
FU KY
Citation: Ky. Fu, PARTIAL BREAKDOWN OF THE TUNNEL OXIDE IN FLOATING-GATE DEVICES, Solid-state electronics, 41(5), 1997, pp. 774-777
Authors:
FU KY
TSANG YL
Citation: Ky. Fu et Yl. Tsang, PUNCHTHROUGH CURRENTS IN SUBMICRON SHORT-CHANNEL MOS-TRANSISTORS, Solid-state electronics, 41(3), 1997, pp. 435-439
Authors:
FU KY
TSANG YL
Citation: Ky. Fu et Yl. Tsang, ON THE PUNCHTHROUGH PHENOMENON IN SUBMICRON MOS-TRANSISTORS, I.E.E.E. transactions on electron devices, 44(5), 1997, pp. 847-855
Authors:
FU KY
Citation: Ky. Fu, A COMPLETE MODEL OF LIFETIME DISTRIBUTION FOR ELECTROMIGRATION FAILURE INCLUDING GRAIN-BOUNDARY AND LATTICE DIFFUSIONS IN SUBMICRON THIN-FILM METALLIZATION, JPN J A P 1, 34(9A), 1995, pp. 4834-4841
Authors:
FU KY
MA XC
ZHANG ZK
CHEN WF
Citation: Ky. Fu et al., TUMOR-NECROSIS-FACTOR IN SYNOVIAL-FLUID OF PATIENTS WITH TEMPOROMANDIBULAR DISORDERS, Journal of oral and maxillofacial surgery, 53(4), 1995, pp. 424-426
Authors:
FU KY
Citation: Ky. Fu, ON THE BAMBOO STRUCTURE AS THE SALVATION OF THIN-FILM METALLIZATION FOR DEEP-SUBMICRON DEVICE TECHNOLOGIES, Applied physics letters, 65(7), 1994, pp. 833-835
Authors:
MENON SS
FU KY
Citation: Ss. Menon et Ky. Fu, A FAST WAFER-LEVEL SCREENING-TEST FOR VLSI METALLIZATION, IEEE electron device letters, 14(6), 1993, pp. 307-309
Authors:
DREYER ML
FU KY
VARKER CJ
Citation: Ml. Dreyer et al., AN ELECTROMIGRATION MODEL THAT INCLUDES THE EFFECTS OF MICROSTRUCTUREAND TEMPERATURE ON MASS-TRANSPORT, Journal of applied physics, 73(10), 1993, pp. 4894-4902
Risultati:
1-8
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