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Results: 1-11 |
Results: 11
IMPROVEMENT IN ELECTRICAL-PROPERTIES AT AN N-GAAS N-GAAS REGROWN INTERFACE USING AMMONIUM SULFIDE TREATMENT/
Authors: FURUHATA N SHIRAISHI Y
Citation: N. Furuhata et Y. Shiraishi, IMPROVEMENT IN ELECTRICAL-PROPERTIES AT AN N-GAAS N-GAAS REGROWN INTERFACE USING AMMONIUM SULFIDE TREATMENT/, JPN J A P 1, 37(1), 1998, pp. 10-14
PERFORMANCE OF A P-CHANNEL HETEROJUNCTION FET WITH P(-GAAS SELECTIVELY GROWN CONTACT LAYERS FOR GAAS COMPLEMENTARY ICS())
Authors: FURUHATA N FUJII M ASAI S MAEDA T OHNO Y
Citation: N. Furuhata et al., PERFORMANCE OF A P-CHANNEL HETEROJUNCTION FET WITH P(-GAAS SELECTIVELY GROWN CONTACT LAYERS FOR GAAS COMPLEMENTARY ICS()), Solid-state electronics, 42(6), 1998, pp. 1049-1055
DELAY-TIME ANALYSIS OF ALGAAS INXGA1-XAS ESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.45) PSEUDOMORPHIC HJFETS WITH INGAAS CHANNEL GROWN UNDER SUPPRESSED IN-SURFACE SEGREGATION CONDITIONS/
Authors: NIWA T TOYOSHIMA H ONDA K FURUHATA N
Citation: T. Niwa et al., DELAY-TIME ANALYSIS OF ALGAAS INXGA1-XAS ESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.45) PSEUDOMORPHIC HJFETS WITH INGAAS CHANNEL GROWN UNDER SUPPRESSED IN-SURFACE SEGREGATION CONDITIONS/, Solid-state electronics, 42(11), 1998, pp. 1911-1916
0.1-MU-M P(-GAAS GATE HJFETS FABRICATED USING 2-STEP DRY-ETCHING AND SELECTIVE MOMBE GROWTH TECHNIQUES())
Authors: WADA S FURUHATA N TOKUSHIMA M FUKAISHI M HIDA H MAEDA T
Citation: S. Wada et al., 0.1-MU-M P(-GAAS GATE HJFETS FABRICATED USING 2-STEP DRY-ETCHING AND SELECTIVE MOMBE GROWTH TECHNIQUES()), I.E.E.E. transactions on electron devices, 45(6), 1998, pp. 1183-1189
SELECTIVE-AREA METALORGANIC MOLECULAR-BEAM EPITAXY OF GAAS USING METALORGANIC CHLORIDE GALLIUM PRECURSORS
Authors: SHIRAISHI Y FURUHATA N OKAMOTO A
Citation: Y. Shiraishi et al., SELECTIVE-AREA METALORGANIC MOLECULAR-BEAM EPITAXY OF GAAS USING METALORGANIC CHLORIDE GALLIUM PRECURSORS, Journal of crystal growth, 182(3-4), 1997, pp. 255-265
FORMATION OF AN N-GAAS N-GAAS REGROWTH INTERFACE WITHOUT CARRIER DEPLETION USING ELECTRON-CYCLOTRON-RESONANCE HYDROGEN PLASMA/
Authors: NIWA T FURUHATA N MAEDA T
Citation: T. Niwa et al., FORMATION OF AN N-GAAS N-GAAS REGROWTH INTERFACE WITHOUT CARRIER DEPLETION USING ELECTRON-CYCLOTRON-RESONANCE HYDROGEN PLASMA/, Journal of crystal growth, 175, 1997, pp. 441-446
CLONING AND CHARACTERIZATION OF THE PICHIA-PASTORIS PRC1 GENE ENCODING CARBOXYPEPTIDASE-Y
Authors: OHI H OHTANI W OKAZAKI N FURUHATA N OHMURA T
Citation: H. Ohi et al., CLONING AND CHARACTERIZATION OF THE PICHIA-PASTORIS PRC1 GENE ENCODING CARBOXYPEPTIDASE-Y, Yeast, 12(1), 1996, pp. 31-40
MICROWAVE AND MILLIMETER-WAVE HIGH-EFFICIENCY POWER HBT
Authors: GOTO N SHIMAWAKI H AMAMIYA Y FURUHATA N KIM CW TANAKA S HONJO K
Citation: N. Goto et al., MICROWAVE AND MILLIMETER-WAVE HIGH-EFFICIENCY POWER HBT, NEC research & development, 36(1), 1995, pp. 139-146
HIGH-F(MAX) ALGAAS INGAAS AND ALGAAS/GAAS HBTS WITH P(+)/P REGROWN BASE CONTACTS/
Authors: SHIMAWAKI H AMAMIYA Y FURUHATA N HONJO K
Citation: H. Shimawaki et al., HIGH-F(MAX) ALGAAS INGAAS AND ALGAAS/GAAS HBTS WITH P(+)/P REGROWN BASE CONTACTS/, I.E.E.E. transactions on electron devices, 42(10), 1995, pp. 1735-1744
INFLUENCE OF METAL N-INAS/INTERLAYER/N-GAAS STRUCTURE ON NONALLOYED OHMIC CONTACT RESISTANCE/
Authors: SHIRAISHI Y FURUHATA N OKAMOTO A
Citation: Y. Shiraishi et al., INFLUENCE OF METAL N-INAS/INTERLAYER/N-GAAS STRUCTURE ON NONALLOYED OHMIC CONTACT RESISTANCE/, Journal of applied physics, 76(9), 1994, pp. 5099-5110
HIGH-FMAX ALGAAS INGAAS AND ALGAAS/GAAS HBTS FABRICATED WITH MOMBE SELECTIVE GROWTH IN EXTRINSIC BASE REGIONS/
Authors: SHIMAWAKI H AMAMIYA Y FURUHATA N HONJO K
Citation: H. Shimawaki et al., HIGH-FMAX ALGAAS INGAAS AND ALGAAS/GAAS HBTS FABRICATED WITH MOMBE SELECTIVE GROWTH IN EXTRINSIC BASE REGIONS/, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2124-2124
Risultati: 1-11 |