HIGH-FMAX ALGAAS INGAAS AND ALGAAS/GAAS HBTS FABRICATED WITH MOMBE SELECTIVE GROWTH IN EXTRINSIC BASE REGIONS/

Authors
SHIMAWAKI H AMAMIYA Y FURUHATA N HONJO K
Citation
H. Shimawaki et al., HIGH-FMAX ALGAAS INGAAS AND ALGAAS/GAAS HBTS FABRICATED WITH MOMBE SELECTIVE GROWTH IN EXTRINSIC BASE REGIONS/, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2124-2124
Citations number
NO
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
40
Issue
11
Year of publication
1993
Pages
2124 - 2124
Database
ISI
SICI code
0018-9383(1993)40:11<2124:HAIAAH>2.0.ZU;2-5