Authors: MUSCA CA SILIQUINI JF FYNN KA NENER BD FARAONE L IRVINE SJC

Citation: Ca. Musca et al., MOCVD-GROWN WIDER-BANDGAP CAPPING LAYERS IN HG1-XCDXTE LONG-WAVELENGTH INFRARED PHOTOCONDUCTORS, Semiconductor science and technology, 11(12), 1996, pp. 1912-1922

Authors: FYNN KA BAJAJ J FARAONE L

Citation: Ka. Fynn et al., A DISCRETE ELEMENT MODEL OF LASER-BEAM INDUCED CURRENT (LBIC) DUE TO THE LATERAL PHOTOVOLTAIC EFFECT IN OPEN-CIRCUIT HGCDTE PHOTODIODES, I.E.E.E. transactions on electron devices, 42(10), 1995, pp. 1775-1782

Authors: SILIQUINI JF FYNN KA NENER BD FARAONE L HARTLEY RH

Citation: Jf. Siliquini et al., IMPROVED DEVICE TECHNOLOGY FOR EPITAXIAL HG1-XCDXTE INFRARED PHOTOCONDUCTOR ARRAYS, Semiconductor science and technology, 9(8), 1994, pp. 1515-1522