Citation: M. Huhtinen et F. Faccio, Computational method to estimate Single Event Upset rates in an accelerator environment, NUCL INST A, 450(1), 2000, pp. 155-172
Authors:
Snoeys, W
Faccio, F
Burns, M
Campbell, M
Cantatore, E
Carrer, N
Casagrande, L
Cavagnoli, A
Dachs, C
Di Liberto, S
Formenti, F
Giraldo, A
Heijne, EHM
Jarron, P
Letheren, M
Marchioro, A
Martinengo, P
Meddi, F
Mikulec, B
Morando, M
Morel, M
Noah, E
Paccagnella, A
Ropotar, I
Saladino, S
Sansen, W
Santopietro, F
Scarlassara, F
Segato, GF
Signe, PM
Soramel, F
Vannucci, L
Vleugels, K
Citation: W. Snoeys et al., Layout techniques to enhance the radiation tolerance of standard CMOS technologies demonstrated on a pixel detector readout chip, NUCL INST A, 439(2-3), 2000, pp. 349-360
Authors:
Jarron, P
Anelli, G
Calin, T
Cosculluela, J
Campbell, B
Delmastro, M
Faccio, F
Giraldo, A
Heijne, E
Kloukinas, K
Letheren, M
Nicolaidis, M
Moreira, P
Paccagnella, A
Marchioro, A
Snoeys, W
Velazco, R
Citation: P. Jarron et al., Deep submicron CMOS technologies for the LHC experiments, NUCL PH B-P, 78, 1999, pp. 625-634
Authors:
Faccio, F
Kloukinas, K
Marchioro, A
Calin, T
Cosculluela, J
Nicolaidis, M
Velazco, R
Citation: F. Faccio et al., Single event effects in static and dynamic registers in a 0.25 mu m CMOS technology, IEEE NUCL S, 46(6), 1999, pp. 1434-1439
Authors:
Anelli, G
Campbell, M
Delmastro, M
Faccio, F
Florian, S
Giraldo, A
Heijne, E
Jarron, P
Kloukinas, K
Marchioro, A
Moreira, P
Snoeys, W
Citation: G. Anelli et al., Radiation tolerant VLSI circuits in standard deep submicron CMOS technologies for the LHC experiments: Practical design aspects, IEEE NUCL S, 46(6), 1999, pp. 1690-1696
Authors:
Campbell, M
Anelli, G
Burns, M
Cantatore, E
Casagrande, L
Delmastro, M
Dinapoli, R
Faccio, F
Heijne, E
Jarron, P
Luptak, M
Marchioro, A
Martinengo, P
Minervini, D
Morel, M
Pernigotti, E
Ropotar, I
Snoeys, W
Wyllie, K
Citation: M. Campbell et al., A pixel readout chip for 10-30 MRad in standard 0.25 mu m CMOS, IEEE NUCL S, 46(3), 1999, pp. 156-160