Authors: Fadlallah, M Szewczyk, A Giannakopoulos, C Cretu, B Monsieur, F Devoivre, T Jomaah, J Ghibaudo, G

Citation: M. Fadlallah et al., Low frequency noise and reliability properties of 0.12 mu m CMOS devices with Ta2O5 as gate dielectrics, MICROEL REL, 41(9-10), 2001, pp. 1361-1366