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Results:
1-4
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Results: 4
On the locking of dislocations by oxygen in silicon
Authors:
Senkader, S Jurkschat, K Gambaro, D Falster, RJ Wilshaw, PR
Citation:
S. Senkader et al., On the locking of dislocations by oxygen in silicon, PHIL MAG A, 81(3), 2001, pp. 759-775
Onset of slip in silicon containing oxide precipitates
Authors:
Jurkschat, K Senkader, S Wilshaw, PR Gambaro, D Falster, RJ
Citation:
K. Jurkschat et al., Onset of slip in silicon containing oxide precipitates, J APPL PHYS, 90(7), 2001, pp. 3219-3225
Oxygen-dislocation interactions in silicon at temperatures below 700 degrees C: Dislocation locking and oxygen diffusion
Authors:
Senkader, S Wilshaw, PR Falster, RJ
Citation:
S. Senkader et al., Oxygen-dislocation interactions in silicon at temperatures below 700 degrees C: Dislocation locking and oxygen diffusion, J APPL PHYS, 89(9), 2001, pp. 4803-4808
A study of oxygen dislocation interactions in CZ-Si
Authors:
Senkader, S Jurkschat, K Wilshaw, PR Falster, RJ
Citation:
S. Senkader et al., A study of oxygen dislocation interactions in CZ-Si, MAT SCI E B, 73(1-3), 2000, pp. 111-115
Risultati:
1-4
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