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Results: 1-10 |
Results: 10
Numerical determination of shallow electronic states bound by dislocationsin semiconductors
Authors: Farvacque, JL Francois, P
Citation: Jl. Farvacque et P. Francois, Numerical determination of shallow electronic states bound by dislocationsin semiconductors, PHYS ST S-B, 223(3), 2001, pp. 635-648
Free-carrier mobility in GaN in the presence of dislocation walls - art. no. 115202
Authors: Farvacque, JL Bougrioua, Z Moerman, I
Citation: Jl. Farvacque et al., Free-carrier mobility in GaN in the presence of dislocation walls - art. no. 115202, PHYS REV B, 6311(11), 2001, pp. 5202
Material optimisation for AlGaN/GaN HFET applications
Authors: Bougrioua, Z Moerman, I Sharma, N Wallis, RH Cheyns, J Jacobs, K Thrush, EJ Considine, L Beanland, R Farvacque, JL Humphreys, C
Citation: Z. Bougrioua et al., Material optimisation for AlGaN/GaN HFET applications, J CRYST GR, 230(3-4), 2001, pp. 573-578
Luminescence of epitaxial GaN laterally overgrown on (0001) sapphire substrate: Spectroscopic characterization and dislocation contrasts
Authors: Dassonneville, S Amokrane, A Sieber, B Farvacque, JL Beaumont, B Gibart, P
Citation: S. Dassonneville et al., Luminescence of epitaxial GaN laterally overgrown on (0001) sapphire substrate: Spectroscopic characterization and dislocation contrasts, J APPL PHYS, 89(7), 2001, pp. 3736-3743
Cathodoluminescence of epitaxial GaN laterally overgrown on (0001) sapphire substrate. Time evolution with low energy electron beam
Authors: Dassonneville, S Amokrane, A Sieber, B Farvacque, JL Beaumont, B Gibart, P Ganiere, JD Leifer, K
Citation: S. Dassonneville et al., Cathodoluminescence of epitaxial GaN laterally overgrown on (0001) sapphire substrate. Time evolution with low energy electron beam, J APPL PHYS, 89(12), 2001, pp. 7966-7972
Extension of the collision-time tensor to the case of inelastic scatteringmechanisms: Application to GaAs and GaN
Authors: Farvacque, JL
Citation: Jl. Farvacque, Extension of the collision-time tensor to the case of inelastic scatteringmechanisms: Application to GaAs and GaN, PHYS REV B, 62(4), 2000, pp. 2536-2541
Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE
Authors: Farvacque, JL Bougrioua, Z Moerman, I Van Tendeloo, G Lebedev, O
Citation: Jl. Farvacque et al., Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE, PHYSICA B, 274, 1999, pp. 140-143
Cathodoluminescence intensity and dislocation contrast evolutions under electron beam excitation in epitaxial GaN laterally overgrown on (0001) sapphire
Authors: Dassonneville, S Amokrane, A Sieber, B Farvacque, JL Beaumont, B Bousquet, V Gibart, P Leifer, K Ganiere, JD
Citation: S. Dassonneville et al., Cathodoluminescence intensity and dislocation contrast evolutions under electron beam excitation in epitaxial GaN laterally overgrown on (0001) sapphire, PHYSICA B, 274, 1999, pp. 148-151
Numerical determination of one-dimensional energy bands bound to dislocations
Authors: Farvacque, JL Francois, P
Citation: Jl. Farvacque et P. Francois, Numerical determination of one-dimensional energy bands bound to dislocations, PHYSICA B, 274, 1999, pp. 995-998
Mobility collapse in undoped and Si-doped GaN grown by LP-MOVPE
Authors: Bougrioua, Z Farvacque, JL Moerman, I Demeester, P Harris, JJ Lee, K van Tendeloo, G Lebedev, O Thrush, EJ
Citation: Z. Bougrioua et al., Mobility collapse in undoped and Si-doped GaN grown by LP-MOVPE, PHYS ST S-B, 216(1), 1999, pp. 571-576
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