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Results: 1
A 5 nm nitrided gate oxide for 0.25 mu m SOICMOS technologies
Authors:
Liu, ST Fechner, P Balster, S Dougal, G Sinha, S Chen, H Shaw, G Yue, J Jenkins, WC Hughes, HL
Citation:
St. Liu et al., A 5 nm nitrided gate oxide for 0.25 mu m SOICMOS technologies, IEEE NUCL S, 46(6), 1999, pp. 1824-1829
Risultati:
1-1
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