Authors: Fehse, R Sweeney, SJ Adams, AR O'Reilly, EP Egorov, AY Riechert, H Illek, S

Citation: R. Fehse et al., Insights into carrier recombination processes in 1.3 mu m GaInNAs-based semiconductor lasers attained using high pressure, ELECTR LETT, 37(2), 2001, pp. 92-93