Authors:
Mogilyanski, D
Gartstein, E
Blumin, M
Fekete, D
Kohler, R
Citation: D. Mogilyanski et al., Microstructural aspects of island nucleation process in elastically relaxed LPOMVPE grown In0.2Ga0.8As/GaAs multilayer, J PHYS D, 34(10A), 2001, pp. A19-A24
Authors:
Sauncy, T
Holtz, M
Brafman, O
Fekete, D
Finkelstein, Y
Citation: T. Sauncy et al., Excitation intensity dependence of photoluminescence from narrow < 100 >- and < 111 > A-grown InxGa1-xAs/GaAs single quantum wells, PHYS REV B, 59(7), 1999, pp. 5049-5055
Authors:
Sauncy, T
Holtz, M
Brafman, O
Fekete, D
Finkelstein, Y
Citation: T. Sauncy et al., Photoluminescence studies of < 100 > and < 111 > InxGa1-xAs/GaAs single quantum wells under hydrostatic pressure, PHYS REV B, 59(7), 1999, pp. 5056-5063
Authors:
Mogilyanski, D
Gartstein, E
Blumin, M
Fekete, D
Opitz, R
Kohler, R
Citation: D. Mogilyanski et al., Investigation of the interface roughness in a LPOMVPE grown AlAs GaAs multilayer, J PHYS D, 32(10A), 1999, pp. A239-A244