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Results:
1-12
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Results: 12
Authors:
Cleland, AN
Pophristic, M
Ferguson, I
Citation: An. Cleland et al., Single-crystal aluminum nitride nanomechanical resonators, APPL PHYS L, 79(13), 2001, pp. 2070-2072
Authors:
Varma, VK
Ferguson, I
Wild, I
Citation: Vk. Varma et al., Decision support system for the sustainable forest management, FOREST ECOL, 128(1-2), 2000, pp. 49-55
Authors:
Hunter, A
Kennedy, L
Henry, J
Ferguson, I
Citation: A. Hunter et al., Application of neural networks and sensitivity analysis to improved prediction of trauma survival, COMPUT M PR, 62(1), 2000, pp. 11-19
Authors:
Lin, J
Bieser, F
Bordua, M
Cherney, M
Chrin, J
Ferguson, I
Ghazikhanian, V
Gross, J
Harper, G
Howe, M
Jacobson, S
Kravtsov, P
Lionberger, C
McParland, C
McShane, T
Meier, J
Sakrejda, I
Yamamoto, E
Zhang, W
Citation: J. Lin et al., Hardware controls for the STAR experiment at RHIC, IEEE NUCL S, 47(2), 2000, pp. 210-213
Authors:
Florescu, DI
Asnin, VM
Pollak, FH
Jones, AM
Ramer, JC
Schurman, MJ
Ferguson, I
Citation: Di. Florescu et al., Thermal conductivity of fully and partially coalesced lateral epitaxial overgrown GaN/sapphire (0001) by scanning thermal microscopy, APPL PHYS L, 77(10), 2000, pp. 1464-1466
Authors:
Ferguson, I
Volz, R
Woolf, A
Citation: I. Ferguson et al., Preharvest factors affecting physiological disorders of fruit, POSTH BIOL, 15(3), 1999, pp. 255-262
Authors:
Long, FH
Pophristic, M
Tran, C
Kalicek, RF
Feng, ZC
Ferguson, I
Citation: Fh. Long et al., Time-resolved laser spectroscopy of nitride semiconductors, MAT SCI E B, 59(1-3), 1999, pp. 147-149
Authors:
Feng, ZC
Armour, E
Ferguson, I
Stall, RA
Holden, T
Malikova, L
Wan, JZ
Pollak, FH
Pavlosky, M
Citation: Zc. Feng et al., Nondestructive assessment of In-0.48(Ga1-xAlx)(0.52)P films grown on GaAs (001) by low pressure metalorganic chemical vapor deposition, J APPL PHYS, 85(7), 1999, pp. 3824-3831
Authors:
Li, T
Carrano, JC
Campbell, JC
Schurman, M
Ferguson, I
Citation: T. Li et al., Analysis of external quantum efficiencies of GaN homojunction p-i-n ultraviolet photodetectors, IEEE J Q EL, 35(8), 1999, pp. 1203-1206
Authors:
Asnin, VM
Pollak, FH
Ramer, J
Schurman, M
Ferguson, I
Citation: Vm. Asnin et al., High spatial resolution thermal conductivity of lateral epitaxial overgrown GaN/sapphire (0001) using a scanning thermal microscope, APPL PHYS L, 75(9), 1999, pp. 1240-1242
Authors:
Huang, YS
Sun, WD
Malikova, L
Pollak, FH
Ferguson, I
Hou, H
Feng, ZC
Ryan, T
Fantner, EB
Citation: Ys. Huang et al., Room-temperature photoluminescence, contactless electroreflectance, and x-ray characterization of a double-side delta-doped GaAlAs/InGaAs high electron mobility transistor structure, APPL PHYS L, 74(13), 1999, pp. 1851-1853
Authors:
Tran, CA
Karlicek, RF
Schurman, M
Osinsky, A
Merai, V
Li, Y
Eliashevich, I
Brown, MG
Nering, J
Ferguson, I
Stall, R
Citation: Ca. Tran et al., Phase separation in InGaN/GaN multiple quantum wells and its relation to brightness of blue and green LEDs, J CRYST GR, 195(1-4), 1998, pp. 397-400
Risultati:
1-12
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