Authors:
Fernandez, JRL
Araujo, CM
da Silva, AF
Leite, JR
Sernelius, BE
Tabata, A
Abramof, E
Chitta, VA
Persson, C
Ahuja, R
Pepe, I
As, DJ
Frey, T
Schikora, D
Lischka, K
Citation: Jrl. Fernandez et al., Electrical resistivity and band-gap shift of Si-doped GaN and metal-nonmetal transition in cubic GaN, InN and AlN systems, J CRYST GR, 231(3), 2001, pp. 420-427
Authors:
Frey, T
As, DJ
Bartels, M
Pawlis, A
Lischka, K
Tabata, A
Fernandez, JRL
Silva, MTO
Leite, JR
Haug, C
Brenn, R
Citation: T. Frey et al., Structural and vibrational properties of molecular beam epitaxy grown cubic (Al, Ga)N/GaN heterostructures, J APPL PHYS, 89(5), 2001, pp. 2631-2634
Authors:
Fernandez, JRL
Chitta, VA
Abramof, E
da Silva, AF
Leite, JR
Tabata, A
As, DJ
Frey, T
Schikora, D
Lischka, K
Citation: Jrl. Fernandez et al., Electrical properties of cubic InN and GaN epitaxial layers as a function of temperature, MRS I J N S, 5, 2000, pp. NIL_191-NIL_196