AAAAAA

   
Results: 1-4 |
Results: 4

Authors: Fernandez, JRL Araujo, CM da Silva, AF Leite, JR Sernelius, BE Tabata, A Abramof, E Chitta, VA Persson, C Ahuja, R Pepe, I As, DJ Frey, T Schikora, D Lischka, K
Citation: Jrl. Fernandez et al., Electrical resistivity and band-gap shift of Si-doped GaN and metal-nonmetal transition in cubic GaN, InN and AlN systems, J CRYST GR, 231(3), 2001, pp. 420-427

Authors: As, DJ Frey, T Bartels, M Lischka, K Goldhahn, R Shokhovets, S Tabata, A Fernandez, JRL Leite, JR
Citation: Dj. As et al., MBE growth of cubic AlyGa1-yN/GaN heterostructures structural, vibrationaland optical properties, J CRYST GR, 230(3-4), 2001, pp. 421-425

Authors: Frey, T As, DJ Bartels, M Pawlis, A Lischka, K Tabata, A Fernandez, JRL Silva, MTO Leite, JR Haug, C Brenn, R
Citation: T. Frey et al., Structural and vibrational properties of molecular beam epitaxy grown cubic (Al, Ga)N/GaN heterostructures, J APPL PHYS, 89(5), 2001, pp. 2631-2634

Authors: Fernandez, JRL Chitta, VA Abramof, E da Silva, AF Leite, JR Tabata, A As, DJ Frey, T Schikora, D Lischka, K
Citation: Jrl. Fernandez et al., Electrical properties of cubic InN and GaN epitaxial layers as a function of temperature, MRS I J N S, 5, 2000, pp. NIL_191-NIL_196
Risultati: 1-4 |