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Results: 1-10 |
Results: 10
Effects of mismatch strain and alloy composition on the formation of InAs islands on InAlAs templates
Authors: Cordier, Y Miska, P Ferre, D
Citation: Y. Cordier et al., Effects of mismatch strain and alloy composition on the formation of InAs islands on InAlAs templates, J ELEC MAT, 30(5), 2001, pp. 453-458
Determination of the composition of coherently strained islands by transmission electron microscopy
Authors: Androussi, Y Ferre, D Lefebvre, A
Citation: Y. Androussi et al., Determination of the composition of coherently strained islands by transmission electron microscopy, APPL SURF S, 177(4), 2001, pp. 258-262
Comparison of InAs islands self-assembled on pseudomorphic and metamorphicInAlAs buffer layers grown on GaAs substrate
Authors: Cordier, Y Miska, P Ferre, D
Citation: Y. Cordier et al., Comparison of InAs islands self-assembled on pseudomorphic and metamorphicInAlAs buffer layers grown on GaAs substrate, J CRYST GR, 227, 2001, pp. 1016-1019
Comparison of In0.33Al0.67As/In0.34Ga0.66As on GaAs metamorphic high electron mobility transistors grown by molecular beam epitaxy with normal and inverse step on linear graded buffer layers
Authors: Cordier, Y Chauveau, JM Ferre, D Dipersio, J
Citation: Y. Cordier et al., Comparison of In0.33Al0.67As/In0.34Ga0.66As on GaAs metamorphic high electron mobility transistors grown by molecular beam epitaxy with normal and inverse step on linear graded buffer layers, J VAC SCI B, 18(5), 2000, pp. 2513-2517
Surface morphology and strain relaxation of InAlAs buffer layers grown lattice mismatched on GaAs with inverse steps
Authors: Cordier, Y Ferre, D Chauveau, JM Dipersio, J
Citation: Y. Cordier et al., Surface morphology and strain relaxation of InAlAs buffer layers grown lattice mismatched on GaAs with inverse steps, APPL SURF S, 166(1-4), 2000, pp. 442-445
0.1-mu m high performance double heterojunction In0.32Al0.68As/In0.33Ga0.67As metamorphic HEMTs on GaAs
Authors: Zaknoune, M Cordier, Y Bollaert, S Ferre, D Theron, D Crosnier, Y
Citation: M. Zaknoune et al., 0.1-mu m high performance double heterojunction In0.32Al0.68As/In0.33Ga0.67As metamorphic HEMTs on GaAs, SOL ST ELEC, 44(9), 2000, pp. 1685-1688
InAlAs/InGaAs metamorphic high electron mobility transistors on GaAs substrate: Influence of indium content on material properties and device performance
Authors: Cordier, Y Bollaert, S Zaknoune, M Dipersio, J Ferre, D
Citation: Y. Cordier et al., InAlAs/InGaAs metamorphic high electron mobility transistors on GaAs substrate: Influence of indium content on material properties and device performance, JPN J A P 1, 38(2B), 1999, pp. 1164-1168
InAlAs buffer layers grown lattice mismatched on GaAs with inverse steps
Authors: Cordier, Y Ferre, D
Citation: Y. Cordier et D. Ferre, InAlAs buffer layers grown lattice mismatched on GaAs with inverse steps, J CRYST GR, 202, 1999, pp. 263-266
0.1 mu m high performance metamorphic In0.32Al0.68As/In0.33Ga0.67As HEMT on GaAs using inverse step InAlAs buffer
Authors: Zaknoune, M Cordier, Y Bollaert, S Ferre, D Theron, D Crosnier, Y
Citation: M. Zaknoune et al., 0.1 mu m high performance metamorphic In0.32Al0.68As/In0.33Ga0.67As HEMT on GaAs using inverse step InAlAs buffer, ELECTR LETT, 35(19), 1999, pp. 1670-1671
Transient simulation or two-phase flows in pipes
Authors: Masella, JM Tran, QH Ferre, D Pauchon, C
Citation: Jm. Masella et al., Transient simulation or two-phase flows in pipes, REV I F PET, 53(6), 1998, pp. 801-811
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