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Results: 1-13 |
Results: 13
Electron mobility enhancement in strained-Si n-MOSFETs fabricated on SiGe-on-insulator (SGOI) substrates
Authors: Cheng, ZY Currie, MT Leitz, CW Taraschi, G Fitzgerald, EA Hoyt, JL Antoniadas, DA
Citation: Zy. Cheng et al., Electron mobility enhancement in strained-Si n-MOSFETs fabricated on SiGe-on-insulator (SGOI) substrates, IEEE ELEC D, 22(7), 2001, pp. 321-323
N2O oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD
Authors: Tan, CS Choi, WK Bera, LK Pey, KL Antoniadis, DA Fitzgerald, EA Currie, MT Maiti, CK
Citation: Cs. Tan et al., N2O oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD, SOL ST ELEC, 45(11), 2001, pp. 1945-1949
Dislocation glide and blocking kinetics in compositionally graded SiGe/Si
Authors: Leitz, CW Currie, MT Kim, AY Lai, J Robbins, E Fitzgerald, EA Bulsara, MT
Citation: Cw. Leitz et al., Dislocation glide and blocking kinetics in compositionally graded SiGe/Si, J APPL PHYS, 90(6), 2001, pp. 2730-2736
Strained Ge channel p-type metal-oxide-semiconductor field-effect transistors grown on Si1-xGex/Si virtual substrates
Authors: Lee, ML Leitz, CW Cheng, Z Pitera, AJ Langdo, T Currie, MT Taraschi, G Fitzgerald, EA Antoniadis, DA
Citation: Ml. Lee et al., Strained Ge channel p-type metal-oxide-semiconductor field-effect transistors grown on Si1-xGex/Si virtual substrates, APPL PHYS L, 79(20), 2001, pp. 3344-3346
High quality GaAs growth by MBE on Si using GeSi buffers and prospects forspace photovoltaics
Authors: Carlin, JA Ringel, SA Fitzgerald, EA Bulsara, M
Citation: Ja. Carlin et al., High quality GaAs growth by MBE on Si using GeSi buffers and prospects forspace photovoltaics, PROG PHOTOV, 8(3), 2000, pp. 323-332
Enterobacter cloacae bloodstream infections traced to contaminated human albumin
Authors: Wang, SA Tokars, JI Bianchine, PJ Carson, LA Arduino, MJ Smith, AL Hansen, NC Fitzgerald, EA Epstein, JS Jarvis, WR
Citation: Sa. Wang et al., Enterobacter cloacae bloodstream infections traced to contaminated human albumin, CLIN INF D, 30(1), 2000, pp. 35-40
Visible light-emitting diodes grown on optimized del(x)[InxGa1-x]P/GaP epitaxial transparent substrates with controlled dislocation density
Authors: Kim, AY Groenert, ME Fitzgerald, EA
Citation: Ay. Kim et al., Visible light-emitting diodes grown on optimized del(x)[InxGa1-x]P/GaP epitaxial transparent substrates with controlled dislocation density, J ELEC MAT, 29(8), 2000, pp. L9-L12
Metal-organic chemical vapor deposition of single domain GaAs on Ge/GexSi1-x/Si and Ge substrates
Authors: Ting, SM Fitzgerald, EA
Citation: Sm. Ting et Ea. Fitzgerald, Metal-organic chemical vapor deposition of single domain GaAs on Ge/GexSi1-x/Si and Ge substrates, J APPL PHYS, 87(5), 2000, pp. 2618-2628
High quality Ge on Si by epitaxial necking
Authors: Langdo, TA Leitz, CW Currie, MT Fitzgerald, EA Lochtefeld, A Antoniadis, DA
Citation: Ta. Langdo et al., High quality Ge on Si by epitaxial necking, APPL PHYS L, 76(25), 2000, pp. 3700-3702
Impact of GaAs buffer thickness on electronic quality of GaAs grown on graded Ge/GeSi/Si substrates
Authors: Carlin, JA Ringel, SA Fitzgerald, EA Bulsara, M Keyes, BM
Citation: Ja. Carlin et al., Impact of GaAs buffer thickness on electronic quality of GaAs grown on graded Ge/GeSi/Si substrates, APPL PHYS L, 76(14), 2000, pp. 1884-1886
Evolution of microstructure and dislocation dynamics in InxGa1-xP graded buffers grown on GaP by metalorganic vapor phase epitaxy: Engineering device-quality substrate materials
Authors: Kim, AY McCullough, WS Fitzgerald, EA
Citation: Ay. Kim et al., Evolution of microstructure and dislocation dynamics in InxGa1-xP graded buffers grown on GaP by metalorganic vapor phase epitaxy: Engineering device-quality substrate materials, J VAC SCI B, 17(4), 1999, pp. 1485-1501
Dislocation dynamics in relaxed graded composition semiconductors
Authors: Fitzgerald, EA Kim, AY Currie, MT Langdo, TA Taraschi, G Bulsara, MT
Citation: Ea. Fitzgerald et al., Dislocation dynamics in relaxed graded composition semiconductors, MAT SCI E B, 67(1-2), 1999, pp. 53-61
Dislocations in relaxed SiGe/Si heterostructures
Authors: Fitzgerald, EA Currie, MT Samavedam, SB Langdo, TA Taraschi, G Yang, V Leitz, CW Bulsara, MT
Citation: Ea. Fitzgerald et al., Dislocations in relaxed SiGe/Si heterostructures, PHYS ST S-A, 171(1), 1999, pp. 227-238
Risultati: 1-13 |