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Results: 1-8 |
Results: 8
Ultrafast dynamics of superconducting K3C60 and Rb3C60
Authors: Fleischer, SB Pevzner, B Dougherty, DJ Zeiger, HJ Dresselhaus, G Dresselhaus, MS Ippen, EP Hebard, AF
Citation: Sb. Fleischer et al., Ultrafast dynamics of superconducting K3C60 and Rb3C60, PHYS REV B, 62(2), 2000, pp. 1366-1378
Optical properties of InGaN quantum wells
Authors: Chichibu, SF Abare, AC Mack, MP Minsky, MS Deguchi, T Cohen, D Kozodoy, P Fleischer, SB Keller, S Speck, JS Bowers, JE Hu, E Mishra, UK Coldren, LA DenBaars, SP Wada, K Sota, T Nakamura, S
Citation: Sf. Chichibu et al., Optical properties of InGaN quantum wells, MAT SCI E B, 59(1-3), 1999, pp. 298-306
Effect of the confinement layer design on the luminescence of InGaN/GaN single quantum wells
Authors: Keller, S Fleischer, SB Chichibu, SF Bowers, JE Mishra, UK DenBaars, SP
Citation: S. Keller et al., Effect of the confinement layer design on the luminescence of InGaN/GaN single quantum wells, PHYS ST S-B, 216(1), 1999, pp. 269-272
Self-assembled ErAs islands in GaAs: Growth and subpicosecond carrier dynamics
Authors: Kadow, C Fleischer, SB Ibbetson, JP Bowers, JE Gossard, AC Dong, JW Palmstrom, CJ
Citation: C. Kadow et al., Self-assembled ErAs islands in GaAs: Growth and subpicosecond carrier dynamics, APPL PHYS L, 75(22), 1999, pp. 3548-3550
High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors onlaterally epitaxially overgrown GaN
Authors: Parish, G Keller, S Kozodoy, P Ibbetson, JP Marchand, H Fini, PT Fleischer, SB DenBaars, SP Mishra, UK Tarsa, EJ
Citation: G. Parish et al., High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors onlaterally epitaxially overgrown GaN, APPL PHYS L, 75(2), 1999, pp. 247-249
Subpicosecond carrier dynamics in low-temperature grown GaAs on Si substrates
Authors: Kadow, C Fleischer, SB Ibbetson, JP Bowers, JE Gossard, AC
Citation: C. Kadow et al., Subpicosecond carrier dynamics in low-temperature grown GaAs on Si substrates, APPL PHYS L, 75(17), 1999, pp. 2575-2577
Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth
Authors: Chichibu, SF Marchand, H Minsky, MS Keller, S Fini, PT Ibbetson, JP Fleischer, SB Speck, JS Bowers, JE Hu, E Mishra, UK DenBaars, SP Deguchi, T Soto, T Nakamura, S
Citation: Sf. Chichibu et al., Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth, APPL PHYS L, 74(10), 1999, pp. 1460-1462
Optical properties of InGaN/GaN quantum wells with Si doped barriers
Authors: Minsky, MS Chichibu, S Fleischer, SB Abare, AC Bowers, JE Hu, EL Keller, S Mishra, UK DenBaars, SP
Citation: Ms. Minsky et al., Optical properties of InGaN/GaN quantum wells with Si doped barriers, JPN J A P 2, 37(11B), 1998, pp. L1362-L1364
Risultati: 1-8 |