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Results: 1-11 |
Results: 11
Study of GaN thin films grown on intermediate-temperature buffer layers bymolecular beam epitaxy
Authors: Lu, LW Fong, WK Zhu, CF Leung, BH Surya, C Wang, J Ge, WK
Citation: Lw. Lu et al., Study of GaN thin films grown on intermediate-temperature buffer layers bymolecular beam epitaxy, J CRYST GR, 234(1), 2002, pp. 99-104
Characterization of high-quality MBE-grown GaN films on intermediate-temperature buffer layers
Authors: Zhu, CF Fong, WK Leung, BH Surya, C
Citation: Cf. Zhu et al., Characterization of high-quality MBE-grown GaN films on intermediate-temperature buffer layers, APPL PHYS A, 72(4), 2001, pp. 495-497
Photoluminescence of rapid-thermal annealed Mg-doped GaN films
Authors: Wang, LS Fong, WK Surya, C Cheah, KW Zheng, WH Wang, ZG
Citation: Ls. Wang et al., Photoluminescence of rapid-thermal annealed Mg-doped GaN films, SOL ST ELEC, 45(7), 2001, pp. 1153-1157
High-mobility GaN epilayer grown by RF plasma-assisted molecular beam epitaxy on intermediate-temperature GaN buffer layer
Authors: Fong, WK Zhu, CF Leung, BH Surya, C
Citation: Wk. Fong et al., High-mobility GaN epilayer grown by RF plasma-assisted molecular beam epitaxy on intermediate-temperature GaN buffer layer, J CRYST GR, 233(3), 2001, pp. 431-438
Effects of rapid thermal annealing on the structural properties of GaN thin films
Authors: Zhu, CF Fong, WK Leung, BH Cheng, CC Surya, C
Citation: Cf. Zhu et al., Effects of rapid thermal annealing on the structural properties of GaN thin films, IEEE DEVICE, 48(6), 2001, pp. 1225-1230
Study of low-frequency excess noise in GaN thin films deposited by RF-MBE on intermediate-temperature buffer layers
Authors: Leung, BH Fong, WK Zhu, CF Surya, C
Citation: Bh. Leung et al., Study of low-frequency excess noise in GaN thin films deposited by RF-MBE on intermediate-temperature buffer layers, IEEE DEVICE, 48(10), 2001, pp. 2400-2404
Growth of high quality GaN thin films by MBE on intermediate-temperature buffer layers
Authors: Fong, WK Zhu, CF Leung, BH Surya, C
Citation: Wk. Fong et al., Growth of high quality GaN thin films by MBE on intermediate-temperature buffer layers, MRS I J N S, 5(12), 2000, pp. 1-4
Rapid solid-phase immunoassay for detection of methicillin-resistant Staphylococcus aureus using cycling probe technology
Authors: Fong, WK Modrusan, Z McNevin, JP Marostenmaki, J Zin, B Bekkaoui, F
Citation: Wk. Fong et al., Rapid solid-phase immunoassay for detection of methicillin-resistant Staphylococcus aureus using cycling probe technology, J CLIN MICR, 38(7), 2000, pp. 2525-2529
Study of the effects of rapid thermal annealing in generation-recombination noise in MBE grown GaN thin films
Authors: Surya, C Zhu, CF Leung, BH Fong, WK Cheng, CC Sin, JKO
Citation: C. Surya et al., Study of the effects of rapid thermal annealing in generation-recombination noise in MBE grown GaN thin films, MICROEL REL, 40(11), 2000, pp. 1905-1909
Ion channeling studies on mixed phases formed in metalorganic chemical vapor deposition grown Mg-doped GaN on Al2O3(0001)
Authors: Sundaravel, B Luo, EZ Xu, JB Wilson, IH Fong, WK Wang, LS Surya, C
Citation: B. Sundaravel et al., Ion channeling studies on mixed phases formed in metalorganic chemical vapor deposition grown Mg-doped GaN on Al2O3(0001), J APPL PHYS, 87(2), 2000, pp. 955-957
Piezoelectric coefficient of GaN measured by laser interferometry
Authors: Leung, CM Chan, HLW Surya, C Fong, WK Choy, CL Chow, P Rosamund, M
Citation: Cm. Leung et al., Piezoelectric coefficient of GaN measured by laser interferometry, J NON-CRYST, 254, 1999, pp. 123-127
Risultati: 1-11 |