Authors: Charrier, A Themlin, JM Thibaudau, F Forbeaux, I Debever, JM

Citation: A. Charrier et al., Electronic structure of alpha and gamma phases of Si(111)-root 3 x root 3-Sn, APPL SURF S, 162, 2000, pp. 375-379

Authors: Forbeaux, I Themlin, JM Charrier, A Thibaudau, F Debever, JM

Citation: I. Forbeaux et al., Solid-state graphitization mechanisms of silicon carbide 6H-SiC polar faces, APPL SURF S, 162, 2000, pp. 406-412

Authors: Portail, M Forbeaux, I Papageorgiou, N Carrere, M Roy, D Layet, JM

Citation: M. Portail et al., Study by HREELS of elementary reactions on graphite surface induced by Ar+and H+ ion bombardment, SURF SCI, 454, 2000, pp. 384-389

Authors: Forbeaux, I Themlin, JM Debever, JM

Citation: I. Forbeaux et al., High-temperature graphitization of the 6H-SiC (000(1)over-bar) face, SURF SCI, 442(1), 1999, pp. 9-18

Authors: Forbeaux, I Themlin, JM Debever, JM

Citation: I. Forbeaux et al., Heteroepitaxial graphite on 6H-SiC(0001): Interface formation through conduction-band electronic structure, PHYS REV B, 58(24), 1998, pp. 16396-16406