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Results: 1-3 |
Results: 3
Secondary defects engineering in c-Si: Influence of implantation dose, temperature, and oxygen concentration
Authors: Poirier, R Schiettekatte, F Roorda, S Fortin, MO
Citation: R. Poirier et al., Secondary defects engineering in c-Si: Influence of implantation dose, temperature, and oxygen concentration, J VAC SCI A, 18(2), 2000, pp. 717-719
Dose and implantation temperature influence on extended defects nucleationin c-Si
Authors: Schiettekatte, F Roorda, S Poirier, R Fortin, MO Chazal, S Heliou, R
Citation: F. Schiettekatte et al., Dose and implantation temperature influence on extended defects nucleationin c-Si, NUCL INST B, 164, 2000, pp. 425-430
Direct evidence for 8-interstitial-controlled nucleation of extended defects in c-Si
Authors: Schiettekatte, F Roorda, S Poirier, R Fortin, MO Chazal, S Heliou, R
Citation: F. Schiettekatte et al., Direct evidence for 8-interstitial-controlled nucleation of extended defects in c-Si, APPL PHYS L, 77(26), 2000, pp. 4322-4324
Risultati: 1-3 |