Authors:
Poirier, R
Schiettekatte, F
Roorda, S
Fortin, MO
Citation: R. Poirier et al., Secondary defects engineering in c-Si: Influence of implantation dose, temperature, and oxygen concentration, J VAC SCI A, 18(2), 2000, pp. 717-719
Authors:
Schiettekatte, F
Roorda, S
Poirier, R
Fortin, MO
Chazal, S
Heliou, R
Citation: F. Schiettekatte et al., Dose and implantation temperature influence on extended defects nucleationin c-Si, NUCL INST B, 164, 2000, pp. 425-430
Authors:
Schiettekatte, F
Roorda, S
Poirier, R
Fortin, MO
Chazal, S
Heliou, R
Citation: F. Schiettekatte et al., Direct evidence for 8-interstitial-controlled nucleation of extended defects in c-Si, APPL PHYS L, 77(26), 2000, pp. 4322-4324