Authors:
Rousseau, K
Rouviere, JL
Fournel, F
Moriceau, H
Citation: K. Rousseau et al., Structural characterization of ultra-thin (001) silicon films bonded onto (001) silicon wafers: a transmission electron microscopy study, MAT SC S PR, 4(1-3), 2001, pp. 101-104
Authors:
Sotta, D
Calvo, V
Ulmer-Tuffigo, H
Magnea, N
Hadji, E
Fournel, F
Rouviere, JL
Jalabert, D
Moriceau, H
Aspar, B
Citation: D. Sotta et al., Confinement induced enhancement of the emission in Er-implanted Si/SiO2 quantum wells fabricated on SOI substrates, MAT SCI E B, 81(1-3), 2001, pp. 43-45
Authors:
Rieutord, F
Eymery, J
Fournel, F
Buttard, D
Oeser, R
Plantevin, O
Moriceau, H
Aspar, B
Citation: F. Rieutord et al., High-energy x-ray reflectivity of buried interfaces created by wafer bonding - art. no. 125408, PHYS REV B, 6312(12), 2001, pp. 5408
Authors:
Rouviere, JL
Rousseau, K
Fournel, F
Moriceau, H
Citation: Jl. Rouviere et al., Huge differences between low- and high-angle twist grain boundaries: The case of ultrathin (001) Si films bonded to (001) Si wafers, APPL PHYS L, 77(8), 2000, pp. 1135-1137