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Results:
1-7
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Results: 7
Authors:
O'Leary, SK
Foutz, BE
Shur, MS
Eastman, LF
Citation: Sk. O'Leary et al., Polar optical phonon instability and intervalley transfer in III-V semiconductors, SOL ST COMM, 118(2), 2001, pp. 79-83
Authors:
Ridley, BK
Foutz, BE
Eastman, LF
Citation: Bk. Ridley et al., Mobility of electrons in bulk GaN and AlxGa1-xN/GaN heterostructures, PHYS REV B, 61(24), 2000, pp. 16862-16869
Authors:
Garrido, JA
Foutz, BE
Smart, JA
Shealy, JR
Murphy, MJ
Schaff, WJ
Eastman, LF
Munoz, E
Citation: Ja. Garrido et al., Low-frequency noise and mobility fluctuations in AlGaN/GaN heterostructurefield-effect transistors, APPL PHYS L, 76(23), 2000, pp. 3442-3444
Authors:
Ambacher, O
Dimitrov, R
Stutzmann, M
Foutz, BE
Murphy, MJ
Smart, JA
Shealy, JR
Weimann, NG
Chu, K
Chumbes, M
Green, B
Sierakowski, AJ
Schaff, WJ
Eastman, LF
Citation: O. Ambacher et al., Role of spontaneous and piezoelectric polarization induced effects in group-III nitride based heterostructures and devices, PHYS ST S-B, 216(1), 1999, pp. 381-389
Authors:
Foutz, BE
Ambacher, O
Murphy, MJ
Tilak, V
Eastman, LF
Citation: Be. Foutz et al., Polarization induced charge at heterojunctions of the III-V nitrides and their alloys, PHYS ST S-B, 216(1), 1999, pp. 415-418
Authors:
Sweenor, DE
O'Leary, SK
Foutz, BE
Citation: De. Sweenor et al., On defining the optical gap of an amorphous semiconductor: an empirical calibration for the case of hydrogenated amorphous silicon, SOL ST COMM, 110(5), 1999, pp. 281-286
Authors:
Foutz, BE
O'Leary, SK
Shur, MS
Eastman, LF
Citation: Be. Foutz et al., Transient electron transport in wurtzite GaN, InN, and AlN, J APPL PHYS, 85(11), 1999, pp. 7727-7734
Risultati:
1-7
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