Authors:
Ambacher, O
Dimitrov, R
Stutzmann, M
Foutz, BE
Murphy, MJ
Smart, JA
Shealy, JR
Weimann, NG
Chu, K
Chumbes, M
Green, B
Sierakowski, AJ
Schaff, WJ
Eastman, LF
Citation: O. Ambacher et al., Role of spontaneous and piezoelectric polarization induced effects in group-III nitride based heterostructures and devices, PHYS ST S-B, 216(1), 1999, pp. 381-389
Authors:
Foutz, BE
Ambacher, O
Murphy, MJ
Tilak, V
Eastman, LF
Citation: Be. Foutz et al., Polarization induced charge at heterojunctions of the III-V nitrides and their alloys, PHYS ST S-B, 216(1), 1999, pp. 415-418
Citation: De. Sweenor et al., On defining the optical gap of an amorphous semiconductor: an empirical calibration for the case of hydrogenated amorphous silicon, SOL ST COMM, 110(5), 1999, pp. 281-286