Authors: Wilk, A Fraisse, B Christol, P Boissier, G Grech, P El Gazouli, M Rouillard, Y Baranov, AN Joullie, A

Citation: A. Wilk et al., MBE growth of InAs/InAsSb/InAlAsSb "W" quantum well laser diodes emitting near 3 mu m, J CRYST GR, 227, 2001, pp. 586-590

Authors: Wilk, A Genty, F Fraisse, B Boissier, G Grech, P El Gazouli, M Christol, P Oswald, J Simecek, T Hulicius, E Joullie, A

Citation: A. Wilk et al., MBE growth of InAs/InAsSb/AlAsSb structures for mid-infrared lasers, J CRYST GR, 223(3), 2001, pp. 341-348

Authors: Yarekha, DA Vicet, A Perona, A Glastre, G Fraisse, B Rouillard, Y Skouri, EM Boissier, G Grech, P Joullie, A Alibert, C Baranov, AN

Citation: Da. Yarekha et al., High efficiency GaInSbAs/GaSb type-II quantum well continuous wave lasers, SEMIC SCI T, 15(4), 2000, pp. 390-394

Authors: Namavar, F Colter, PC Planes, N Fraisse, B Pernot, J Juillaguet, S Camassel, J

Citation: F. Namavar et al., Investigation of porous silicon as a new compliant substrate for 3C-SiC deposition, MAT SCI E B, 61-2, 1999, pp. 571-575