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Results: 1-12 |
Results: 12
Evidence of free carrier concentration gradient along the c-axis for undoped GaN single crystals
Authors: Frayssinet, E Knap, W Krukowski, S Perlin, P Wisniewski, P Suski, T Grzegory, I Porowski, S
Citation: E. Frayssinet et al., Evidence of free carrier concentration gradient along the c-axis for undoped GaN single crystals, J CRYST GR, 230(3-4), 2001, pp. 442-447
High magnetic field studies of two-dimensional electron gas in a GaN/GaAlNheterostructure: Mechanisms of parallel conduction
Authors: Contreras, S Knap, W Frayssinet, E Sadowski, ML Goiran, M Shur, M
Citation: S. Contreras et al., High magnetic field studies of two-dimensional electron gas in a GaN/GaAlNheterostructure: Mechanisms of parallel conduction, J APPL PHYS, 89(2), 2001, pp. 1251-1255
Microwave plasma etching of GaN in nitrogen atmosphere
Authors: Frayssinet, E Prystawko, P Leszczynski, M Domagala, J Knap, W Robert, JL
Citation: E. Frayssinet et al., Microwave plasma etching of GaN in nitrogen atmosphere, PHYS ST S-A, 181(1), 2000, pp. 151-155
Infrared studies on GaN single crystals and homoepitaxial layers
Authors: Frayssinet, E Knap, W Prystawko, P Leszczynski, M Grzegory, I Suski, T Beaumont, B Gibart, P
Citation: E. Frayssinet et al., Infrared studies on GaN single crystals and homoepitaxial layers, J CRYST GR, 218(2-4), 2000, pp. 161-166
Far-infrared and selective photoluminescence studies of shallow donors in GaN hetero- and homoepitaxial layers
Authors: Neu, G Teisseire, M Frayssinet, E Knap, W Sadowski, ML Witowski, AM Pakula, K Leszczynski, M Prystawko, P
Citation: G. Neu et al., Far-infrared and selective photoluminescence studies of shallow donors in GaN hetero- and homoepitaxial layers, APPL PHYS L, 77(9), 2000, pp. 1348-1350
High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates
Authors: Frayssinet, E Knap, W Lorenzini, P Grandjean, N Massies, J Skierbiszewski, C Suski, T Grzegory, I Porowski, S Simin, G Hu, X Khan, MA Shur, MS Gaska, R Maude, D
Citation: E. Frayssinet et al., High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates, APPL PHYS L, 77(16), 2000, pp. 2551-2553
GaN-AlGaN heterostructure field-effect transistors over bulk GaN substrates
Authors: Khan, MA Yang, JW Knap, W Frayssinet, E Hu, X Simin, G Prystawko, P Leszczynski, M Grzegory, I Porowski, S Gaska, R Shur, MS Beaumont, B Teisseire, M Neu, G
Citation: Ma. Khan et al., GaN-AlGaN heterostructure field-effect transistors over bulk GaN substrates, APPL PHYS L, 76(25), 2000, pp. 3807-3809
Infrared reflectivity and transport investigations of GaN single crystals and homoepitaxial layers
Authors: Frayssinet, E Knap, W Robert, JL Prystawko, P Leszczynski, M Suski, T Wisniewski, P Litwin-Staszewska, E Porowski, S Beaumont, B Gibart, P
Citation: E. Frayssinet et al., Infrared reflectivity and transport investigations of GaN single crystals and homoepitaxial layers, PHYS ST S-B, 216(1), 1999, pp. 91-94
Conduction band energy spectrum of two-dimensional electrons in GaN/AlGaN heterojunctions
Authors: Knap, W Frayssinet, E Skierbiszewski, C Chaubet, C Sadowski, ML Maude, D Khan, MA Shur, MS
Citation: W. Knap et al., Conduction band energy spectrum of two-dimensional electrons in GaN/AlGaN heterojunctions, PHYS ST S-B, 216(1), 1999, pp. 719-725
GaN homoepitaxial layers grown by metalorganic chemical vapor deposition
Authors: Leszczynski, M Beaumont, B Frayssinet, E Knap, W Prystawko, P Suski, T Grzegory, I Porowski, S
Citation: M. Leszczynski et al., GaN homoepitaxial layers grown by metalorganic chemical vapor deposition, APPL PHYS L, 75(9), 1999, pp. 1276-1278
Effective g() factor of two-dimensional electrons in GaN/AlGaN heterojunctions
Authors: Knap, W Frayssinet, E Sadowski, ML Skierbiszewski, C Maude, D Falko, V Khan, MA Shur, MS
Citation: W. Knap et al., Effective g() factor of two-dimensional electrons in GaN/AlGaN heterojunctions, APPL PHYS L, 75(20), 1999, pp. 3156-3158
Doping of homoepitaxial GaN layers
Authors: Prystawko, P Leszczynski, M Beaumont, B Gibart, P Frayssinet, E Knap, W Wisniewski, P Bockowski, M Suski, T Porowski, S
Citation: P. Prystawko et al., Doping of homoepitaxial GaN layers, PHYS ST S-B, 210(2), 1998, pp. 437-443
Risultati: 1-12 |