Authors: Fukai, YK Hyuga, F Nittono, T Watanabe, K Sugahara, H

Citation: Yk. Fukai et al., Improvement of InGaP/GaAs heterointerface quality by controlling AsH3 flowconditions, J VAC SCI B, 17(6), 1999, pp. 2524-2529

Authors: Fukai, YK Yamasaki, K Nishimura, K

Citation: Yk. Fukai et al., Threshold voltage shift in 0.1 mu m self-aligned-gate GaAs MESFETs under bias stress and related degradation of ultra-high-speed digital ICs, MICROEL REL, 39(12), 1999, pp. 1787-1792