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Results: 1-13 |
Results: 13
Selective etching of GaN polar surface in potassium hydroxide solution studied by x-ray photoelectron spectroscopy
Authors: Li, DS Sumiya, M Fuke, S Yang, DR Que, DL Suzuki, Y Fukuda, Y
Citation: Ds. Li et al., Selective etching of GaN polar surface in potassium hydroxide solution studied by x-ray photoelectron spectroscopy, J APPL PHYS, 90(8), 2001, pp. 4219-4223
Residual strain and threading dislocation density in InGaAs layers grown on Si substrates by metalorganic vapor-phase epitaxy
Authors: Takano, Y Kururi, T Kuwahara, K Fuke, S
Citation: Y. Takano et al., Residual strain and threading dislocation density in InGaAs layers grown on Si substrates by metalorganic vapor-phase epitaxy, APPL PHYS L, 78(1), 2001, pp. 93-95
Structural investigation of metalorganic chemical-vapor-deposition-grown InGaAs layers on misoriented GaAs substrates
Authors: Takano, Y Masuda, M Shirakawa, Y Kuwahara, K Fuke, S
Citation: Y. Takano et al., Structural investigation of metalorganic chemical-vapor-deposition-grown InGaAs layers on misoriented GaAs substrates, JPN J A P 2, 39(9AB), 2000, pp. L901-L904
Influence of In-doping on the crystalline quality of GaAs epilayers on Si substrates
Authors: Takano, Y Fuke, S
Citation: Y. Takano et S. Fuke, Influence of In-doping on the crystalline quality of GaAs epilayers on Si substrates, DEFECT DIFF, 183-1, 2000, pp. 77-83
Characteristics of the GaN polar surface during an etching process in KOH solution
Authors: Li, DS Sumiya, M Yoshimura, K Suzuki, Y Fukuda, Y Fuke, S
Citation: Ds. Li et al., Characteristics of the GaN polar surface during an etching process in KOH solution, PHYS ST S-A, 180(1), 2000, pp. 357-362
Epitaxial growth of ZnO films on lattice-matched ScAlMgO4(0001) substrates
Authors: Tamura, K Ohtomo, A Saikusa, K Osaka, Y Makino, T Segawa, Y Sumiya, M Fuke, S Koinuma, H Kawasaki, M
Citation: K. Tamura et al., Epitaxial growth of ZnO films on lattice-matched ScAlMgO4(0001) substrates, J CRYST GR, 214, 2000, pp. 59-62
Growth mode and surface morphology of a GaN film deposited along the N-face polar direction on c-plane sapphire substrate
Authors: Sumiya, M Yoshimura, K Ito, T Ohtsuka, K Fuke, S Mizuno, K Yoshimoto, M Koinuma, H Ohtomo, A Kawasaki, M
Citation: M. Sumiya et al., Growth mode and surface morphology of a GaN film deposited along the N-face polar direction on c-plane sapphire substrate, J APPL PHYS, 88(2), 2000, pp. 1158-1165
Effect of high molecular weight components on the taste of extracts.
Authors: Fuke, S
Citation: S. Fuke, Effect of high molecular weight components on the taste of extracts., NIP SUIS G, 66(1), 2000, pp. 131-132
Dependence of impurity incorporation on the polar direction of GaN film growth
Authors: Sumiya, M Yoshimura, K Ohtsuka, K Fuke, S
Citation: M. Sumiya et al., Dependence of impurity incorporation on the polar direction of GaN film growth, APPL PHYS L, 76(15), 2000, pp. 2098-2100
Influence of thermal annealing on GaN buffer layers and the property of subsequent GaN layers grown by metalorganic chemical vapor deposition
Authors: Ito, T Sumiya, M Takano, Y Ohtsuka, K Fuke, S
Citation: T. Ito et al., Influence of thermal annealing on GaN buffer layers and the property of subsequent GaN layers grown by metalorganic chemical vapor deposition, JPN J A P 1, 38(2A), 1999, pp. 649-653
Secondary ion mass spectrometry analysis of Mg doped GaN films prepared byhot wall epitaxy
Authors: Ishida, A Matsuda, K Chu, S Tanoue, F Sakakibara, S Ishino, K Fuke, S Fujiyasu, H
Citation: A. Ishida et al., Secondary ion mass spectrometry analysis of Mg doped GaN films prepared byhot wall epitaxy, MAT SCI E B, 59(1-3), 1999, pp. 230-234
Effect of AlN buffer layer deposition conditions on the properties of GaN layer
Authors: Ito, T Ohtsuka, K Kuwahara, K Sumiya, M Takano, Y Fuke, S
Citation: T. Ito et al., Effect of AlN buffer layer deposition conditions on the properties of GaN layer, J CRYST GR, 205(1-2), 1999, pp. 20-24
Analysis of the polar direction of GaN film growth by coaxial impact collision ion scattering spectroscopy
Authors: Sumiya, M Tanaka, M Ohtsuka, K Fuke, S Ohnishi, T Ohkubo, I Yoshimoto, M Koinuma, H Kawasaki, M
Citation: M. Sumiya et al., Analysis of the polar direction of GaN film growth by coaxial impact collision ion scattering spectroscopy, APPL PHYS L, 75(5), 1999, pp. 674-676
Risultati: 1-13 |