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Citation: Kt. Queeney et al., In-situ FTIR studies of reactions at the silicon/liquid interface: Wet chemical etching of ultrathin SiO2 on Si(100), J PHYS CH B, 105(18), 2001, pp. 3903-3907

Authors: Fukidome, H Matsumura, M

Citation: H. Fukidome et M. Matsumura, Effect of dissolved oxygen on etching process of Si(111) in 2.5% NH3 solution, SURF SCI, 463(3), 2000, pp. L649-L653

Authors: Fukidome, H Matsumura, M

Citation: H. Fukidome et M. Matsumura, A very simple method of flattening Si(111) surface at an atomic level using oxygen-free water, JPN J A P 2, 38(10A), 1999, pp. L1085-L1086

Authors: Fukidome, H Matsumura, M Komeda, T Namba, K Nishioka, Y

Citation: H. Fukidome et al., In situ atomic force microscopy observation of dissolution process of Si(111) in oxygen-free water at room temperature, EL SOLID ST, 2(8), 1999, pp. 393-394