Authors:
Schwalke, U
Fuldner, M
Zatsch, W
Bothe, K
Hadawi, D
Janssen, I
Schon, P
Citation: U. Schwalke et al., Dual-workfunction gate engineering in a corner parasitics-free shallow-trench-isolation complementary-metal-oxide-semiconductor technology, JPN J A P 1, 38(4B), 1999, pp. 2232-2237