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CONTRIBUTION OF DIFFUSION INTERSTITIAL INJECTION TO GETTERING OF METALLIC IMPURITIES IN SILICON
Authors: GAISEANU F SCHROTER W
Citation: F. Gaiseanu et W. Schroter, CONTRIBUTION OF DIFFUSION INTERSTITIAL INJECTION TO GETTERING OF METALLIC IMPURITIES IN SILICON, Journal of the Electrochemical Society, 143(1), 1996, pp. 361-362
DEPENDENCE OF THE CHEMICAL ETCH RATE AND ETCH TIME OF SILICON ON THE POST-IMPLANTED DIFFUSION DEPTH - APPLICATION FOR MEMBRANE ACHIEVEMENT
Authors: GAISEANU F COBIANU C DASCALU D
Citation: F. Gaiseanu et al., DEPENDENCE OF THE CHEMICAL ETCH RATE AND ETCH TIME OF SILICON ON THE POST-IMPLANTED DIFFUSION DEPTH - APPLICATION FOR MEMBRANE ACHIEVEMENT, Journal of materials science letters, 12(20), 1993, pp. 1652-1653
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