Authors: MOKEROV VG FEDOROV YV GUK AV GALIEV GB STRAKHOV VA YAREMENKO NG

Citation: Vg. Mokerov et al., OPTICAL-PROPERTIES OF SILICON-DOPED (100)GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY, Semiconductors (Woodbury, N.Y.), 32(9), 1998, pp. 950-952

Authors: GALIEV GB IMAMOV RM MEDVEDEV BK MOKEROV VG MUKHAMEDZHANOV EK PASHAEV EM CHEGLAKOV VB

Citation: Gb. Galiev et al., INVESTIGATION OF THE STRUCTURAL-PROPERTIES OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES, Semiconductors, 31(10), 1997, pp. 1003-1005