AAAAAA

   
Results: 1-4 |
Results: 4

Authors: LEONG KC LIU PC YEO KS GAN CH QIAN G LEE YM CHAN L
Citation: Kc. Leong et al., COMPARISON OF LATCHUP IMMUNITY FOR SILICIDED SOURCE DRAIN AT DIFFERENT N(+) IMPLANT ENERGY/, Microelectronics and reliability, 38(9), 1998, pp. 1401-1405

Authors: LEONG KC LIU PC HO HM GAN CH CHAN L
Citation: Kc. Leong et al., IMPACT OF GEOMETRICAL SCALING ON PARASITIC PNP BIPOLAR-TRANSISTOR IN N-WELL, 0.25 MU-M CMOS DEVICES AND ITS EFFECT ON LATCHUP IMMUNITY, Microelectronics and reliability, 38(10), 1998, pp. 1621-1626

Authors: LING CH SEAH BP SAMUDRA GS GAN CH
Citation: Ch. Ling et al., MEASUREMENT AND SIMULATION OF HOT-CARRIER DEGRADATION IN PMOSFET BY GATE CAPACITANCE, I.E.E.E. transactions on electron devices, 42(5), 1995, pp. 928-934

Authors: GAN CH DELALAMO JA BENNETT BR MEYERSON BS CRABBE EF SODINI CG REIF LR
Citation: Ch. Gan et al., SI SI1-XGEX VALENCE-BAND DISCONTINUITY MEASUREMENTS USING A SEMICONDUCTOR-INSULATOR-SEMICONDUCTOR (SIS) HETEROSTRUCTURE/, I.E.E.E. transactions on electron devices, 41(12), 1994, pp. 2430-2439
Risultati: 1-4 |