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Citation: Gl. Belenky et al., DIRECT MEASUREMENT OF THE CARRIER LEAKAGE OUT OF THE ACTIVE-REGION ININGAASP INP LASER HETEROSTRUCTURES/, I.E.E.E. transactions on electron devices, 42(2), 1995, pp. 215-218

Authors: BELENKY GL GARBINSKI PA SMITH PR LURYI S CHO AY HAMM RA SIVCO DL

Citation: Gl. Belenky et al., MICROWAVE PERFORMANCE OF TOP-COLLECTOR CHARGE INJECTION TRANSISTORS ON INP SUBSTRATES, Semiconductor science and technology, 9(6), 1994, pp. 1215-1219

Authors: BELENKY GL KASTALSKY A LURYI S GARBINSKI PA CHO AY SIVCO DL

Citation: Gl. Belenky et al., MEASUREMENT OF THE EFFECTIVE TEMPERATURE OF MAJORITY CARRIERS UNDER INJECTION OF HOT MINORITY-CARRIERS IN HETEROSTRUCTURES, Applied physics letters, 64(17), 1994, pp. 2247-2249

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Citation: Gl. Belenky et al., COLLECTOR-UP LIGHT-EMITTING CHARGE INJECTION TRANSISTORS IN N-INGAAS INALAS/P-INGAAS AND N-INGAAS/INP/P-INGAAS HETEROSTRUCTURES/, Journal of applied physics, 73(12), 1993, pp. 8618-8627

Authors: MASTRAPASQUA M LURYI S BELENKY GL GARBINSKI PA CHO AY SIVCO DL

Citation: M. Mastrapasqua et al., MULTITERMINAL LIGHT-EMITTING LOGIC DEVICE ELECTRICALLY REPROGRAMMABLEBETWEEN OR AND NAND FUNCTIONS, I.E.E.E. transactions on electron devices, 40(8), 1993, pp. 1371-1377