DIRECT MEASUREMENT OF THE CARRIER LEAKAGE OUT OF THE ACTIVE-REGION ININGAASP INP LASER HETEROSTRUCTURES/

Authors
BELENKY GL KAZARINOV RF LOPATA J LURYI S TANBUNELK T GARBINSKI PA
Citation
Gl. Belenky et al., DIRECT MEASUREMENT OF THE CARRIER LEAKAGE OUT OF THE ACTIVE-REGION ININGAASP INP LASER HETEROSTRUCTURES/, I.E.E.E. transactions on electron devices, 42(2), 1995, pp. 215-218
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
42
Issue
2
Year of publication
1995
Pages
215 - 218
Database
ISI
SICI code
0018-9383(1995)42:2<215:DMOTCL>2.0.ZU;2-A
Abstract
Leakage of electrons out of the active region of InGaAsP/InP laser het erostructures at different temperatures was measured by a purely elect rical method. Comparison of the obtained results with the results of m odeling indicates that special attention should be paid to the accepto r doping levels in the p cladding layer immediately adjacent the activ e region. Lower acceptor concentration may lead to unacceptably high t hermionic leakage.