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Results: 1-9 |
Results: 9
MONOLITHIC INTEGRATION OF AN INGAASP-INP MQW LASER WAVEGUIDE USING A TWIN-GUIDE STRUCTURE WITH A MODE SELECTION LAYER/
Authors: XU L GOKHALE MR STUDENKOV P DRIES JC CHAO CP GARBUZOV D FORREST SR
Citation: L. Xu et al., MONOLITHIC INTEGRATION OF AN INGAASP-INP MQW LASER WAVEGUIDE USING A TWIN-GUIDE STRUCTURE WITH A MODE SELECTION LAYER/, IEEE photonics technology letters, 9(5), 1997, pp. 569-571
EFFICIENT 2.0-2.6 MU-M WAVELENGTH PHOTOLUMINESCENCE FROM NARROW BANDGAP INASP INGAAS DOUBLE HETEROSTRUCTURES GROWN ON INP SUBSTRATES/
Authors: GARBUZOV D KIM DS FORREST SR MENNA R LANGE M OLSEN GH COHEN M
Citation: D. Garbuzov et al., EFFICIENT 2.0-2.6 MU-M WAVELENGTH PHOTOLUMINESCENCE FROM NARROW BANDGAP INASP INGAAS DOUBLE HETEROSTRUCTURES GROWN ON INP SUBSTRATES/, Journal of electronic materials, 25(9), 1996, pp. 1501-1505
SYSTEMATIC STUDY OF THE PHOTOLUMINESCENT AND ELECTROLUMINESCENT PROPERTIES OF PENTACOORDINATE CARBOXYLATE AND CHLORO BIS(8-HYDROXYQUINALDINE) COMPLEXES OF GALLIUM(III)
Authors: SAPOCHAK LS BURROWS PE GARBUZOV D HO DM FORREST SR THOMPSON ME
Citation: Ls. Sapochak et al., SYSTEMATIC STUDY OF THE PHOTOLUMINESCENT AND ELECTROLUMINESCENT PROPERTIES OF PENTACOORDINATE CARBOXYLATE AND CHLORO BIS(8-HYDROXYQUINALDINE) COMPLEXES OF GALLIUM(III), Journal of physical chemistry, 100(45), 1996, pp. 17766-17771
1.5-MU-M WAVELENGTH, SCH-MQW INGAASP INP BROADENED-WAVE-GUIDE LASER-DIODES WITH LOW INTERNAL LOSS AND HIGH-OUTPUT POWER/
Authors: GARBUZOV D XU L FORREST SR MENNA R MARTINELLI R CONNOLLY JC
Citation: D. Garbuzov et al., 1.5-MU-M WAVELENGTH, SCH-MQW INGAASP INP BROADENED-WAVE-GUIDE LASER-DIODES WITH LOW INTERNAL LOSS AND HIGH-OUTPUT POWER/, Electronics Letters, 32(18), 1996, pp. 1717-1719
2.78 MU-M INGAASSB ALGAASSB MULTIPLE-QUANTUM-WELL LASERS WITH METASTABLE INGAASSB WELLS GROWN BY MOLECULAR-BEAM EPITAXY/
Authors: LEE H YORK PK MENNA RJ MARTINELLI RU GARBUZOV D NARAYAN SY
Citation: H. Lee et al., 2.78 MU-M INGAASSB ALGAASSB MULTIPLE-QUANTUM-WELL LASERS WITH METASTABLE INGAASSB WELLS GROWN BY MOLECULAR-BEAM EPITAXY/, Journal of crystal growth, 150(1-4), 1995, pp. 1354-1357
1.75-MU-M STRAINED INGAAS MULTIQUANTUM-WELL LASER GROWN ON INAS0.08P0.92 TERNARY SUBSTRATE
Authors: MENNA RJ MARTINELLI RU GARBUZOV D PAFF R VERMAAK JS OLSEN GH BONNER WA
Citation: Rj. Menna et al., 1.75-MU-M STRAINED INGAAS MULTIQUANTUM-WELL LASER GROWN ON INAS0.08P0.92 TERNARY SUBSTRATE, Electronics Letters, 31(3), 1995, pp. 188-189
PHOTOLUMINESCENCE STUDY OF EXCESS CARRIER SPILLOVER IN 1.3-MU-M WAVELENGTH STRAINED MULTI-QUANTUM-WELL INGAASP INP LASER STRUCTURES/
Authors: GARBUZOV D SHIAU GJ BULOVIC V BORODITSKY M CHAO CP FORREST SR
Citation: D. Garbuzov et al., PHOTOLUMINESCENCE STUDY OF EXCESS CARRIER SPILLOVER IN 1.3-MU-M WAVELENGTH STRAINED MULTI-QUANTUM-WELL INGAASP INP LASER STRUCTURES/, Applied physics letters, 66(11), 1995, pp. 1307-1309
EFFICIENCY OF PHOTOLUMINESCENCE AND EXCESS CARRIER CONFINEMENT IN INGAASP GAAS STRUCTURES PREPARED BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION/
Authors: DIAZ J YI HJ ERDTMANN M HE X KOLEV E GARBUZOV D BIGAN E RAZEGHI M
Citation: J. Diaz et al., EFFICIENCY OF PHOTOLUMINESCENCE AND EXCESS CARRIER CONFINEMENT IN INGAASP GAAS STRUCTURES PREPARED BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION/, Journal of applied physics, 76(2), 1994, pp. 700-704
HIGH-POWER INGAASP GAAS 0.8-MU-M LASER-DIODES AND PECULIARITIES OF OPERATIONAL CHARACTERISTICS/
Authors: DIAZ J ELIASHEVICH I HE X YI H WANG L KOLEV E GARBUZOV D RAZEGHI M
Citation: J. Diaz et al., HIGH-POWER INGAASP GAAS 0.8-MU-M LASER-DIODES AND PECULIARITIES OF OPERATIONAL CHARACTERISTICS/, Applied physics letters, 65(8), 1994, pp. 1004-1005
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