Authors: USHAKOV NM GELBUKH SS PETROSYAN VI

Citation: Nm. Ushakov et al., TEMPERATURE EFFECT ON THE HEIGHT OF METAL -SEMICONDUCTOR CONTACT BARRIER DURING ITS FORMATION, Zurnal tehniceskoj fiziki, 66(11), 1996, pp. 197-200

Authors: VDOVINA LM GELBUKH SS GUSYATNIKOV VN

Citation: Lm. Vdovina et al., BORON-OXIDE EVAPORATION AND REDUCTION IN BORON-DOPED SILICON GROWTH BY MOLECULAR-BEAM EPITAXY, Inorganic materials, 32(9), 1996, pp. 911-913