Authors: ZAITSEV SV GEORGIEVSKII AM

Citation: Sv. Zaitsev et Am. Georgievskii, LIFETIME OF NONEQUILIBRIUM CARRIERS IN SEMICONDUCTORS FROM THE STANDPOINT OF A COLLECTIVE-INTERACTION IN THE PROCESS OF RADIATIVE RECOMBINATION, Semiconductors, 32(3), 1998, pp. 332-334

Authors: ZAITSEV SV GORDEEV NY KOPCHATOV VI GEORGIEVSKII AM USTINOV VM ZHUKOV AE EGOROV AY KOVSH AR LEDENTSOV NN KOPEV PS ALFEROV ZI BIMBERG D

Citation: Sv. Zaitsev et al., QUANTUM-DOT LASERS - PRINCIPAL COMPONENTS OF THE THRESHOLD CURRENT-DENSITY, Semiconductors, 31(9), 1997, pp. 947-949

Authors: GEORGIEVSKII AM SOLOVEV VA RYVKIN BS STRUGOV NA KOTELNIKOV EY TOKRANOV VE SHIK AY

Citation: Am. Georgievskii et al., INVESTIGATION OF CARRIER TRANSPORT IN A SYSTEM OF UNDOPED QUANTUM-WELLS UNDER PULSED EXCITATION, Semiconductors, 31(4), 1997, pp. 378-383