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Results: 10

Authors: YOUNG CF POINDEXTER EH GERARDI GJ WARREN WL KEEBLE DJ
Citation: Cf. Young et al., ELECTRON-PARAMAGNETIC-RESONANCE OF CONDUCTION-BAND ELECTRONS IN SILICON, Physical review. B, Condensed matter, 55(24), 1997, pp. 16245-16248

Authors: YOUNG CF POINDEXTER EH GERARDI GJ
Citation: Cf. Young et al., ELECTRON-PARAMAGNETIC-RESONANCE OF POROUS SILICON - OBSERVATION AND IDENTIFICATION OF CONDUCTION-BAND ELECTRONS, Journal of applied physics, 81(11), 1997, pp. 7468-7470

Authors: KEEBLE DJ POINDEXTER EH GERARDI GJ
Citation: Dj. Keeble et al., ELECTRON-PARAMAGNETIC-RESONANCE STUDIES OF IMPURITY DEFECTS IN PBTIO3, Applied spectroscopy, 51(1), 1997, pp. 117-122

Authors: YOUNG CF XIE K POINDEXTER EH GERARDI GJ KEEBLE DJ
Citation: Cf. Young et al., ELECTRON-PARAMAGNETIC-RESONANCE OF NITROGEN PAIRS AND TRIADS IN 6H-SIC - ANALYSIS AND IDENTIFICATION, Applied physics letters, 70(14), 1997, pp. 1858-1860

Authors: WARREN WL TUTTLE BA RONG FC GERARDI GJ POINDEXTER EH
Citation: Wl. Warren et al., ELECTRON-PARAMAGNETIC-RESONANCE INVESTIGATION OF ACCEPTOR CENTERS IN PB(ZR,TI)O-3 CERAMICS, Journal of the American Ceramic Society, 80(3), 1997, pp. 680-684

Authors: GERARDI GJ POINDEXTER EH KEEBLE DJ
Citation: Gj. Gerardi et al., PARAMAGNETIC CENTERS AND DOPANT EXCITATION IN CRYSTALLINE SILICON-CARBIDE, Applied spectroscopy, 50(11), 1996, pp. 1428-1434

Authors: POINDEXTER EH RONG FC BUCHWALD WR GERARDI GJ KEEBLE DJ WARREN WL
Citation: Eh. Poindexter et al., ELECTRICALLY-DETECTED MAGNETIC-RESONANCE NEAR THE P-DOPED N-DOPED INTERFACE OF SI JUNCTION DIODES, Colloids and surfaces. A, Physicochemical and engineering aspects, 72, 1993, pp. 119-125

Authors: GERARDI GJ RONG FC POINDEXTER EH HARMATZ M SHEN H WARREN WL
Citation: Gj. Gerardi et al., STUDY OF A PARAMAGNETIC CENTER ON AN SIO-TREATED GAAS SURFACE, Colloids and surfaces. A, Physicochemical and engineering aspects, 72, 1993, pp. 161-164

Authors: RONG FC HARVEY JF POINDEXTER EH GERARDI GJ
Citation: Fc. Rong et al., IDENTIFICATION AND PROPERTIES OF PB-LIKE CENTERS IN PHOTOLUMINESCENT POROUS SILICON, Microelectronic engineering, 22(1-4), 1993, pp. 147-150

Authors: RONG FC HARVEY JF POINDEXTER EH GERARDI GJ
Citation: Fc. Rong et al., NATURE OF P-B-LIKE DANGLING-ORBITAL CENTERS IN LUMINESCENT POROUS SILICON, Applied physics letters, 63(7), 1993, pp. 920-922
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