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Results: 1-4 |
Results: 4
DONOR-ACCEPTOR RECOMBINATION IN TYPE-II GAAS ALAS SUPERLATTICES/
Authors: ZHURAVLEV KS GILINSKII AM SHAMIRZAEV TS PREOBRAZHENSKII VV SEMYAGIN BR PUTYATO MA CHIPKIN SS
Citation: Ks. Zhuravlev et al., DONOR-ACCEPTOR RECOMBINATION IN TYPE-II GAAS ALAS SUPERLATTICES/, Physics of the solid state, 40(9), 1998, pp. 1577-1581
MOBILE LINE IN THE ACCEPTOR PHOTOLUMINESCENCE SPECTRUM OF PURE GAAS
Authors: ZHURAVLEV KS GILINSKII AM
Citation: Ks. Zhuravlev et Am. Gilinskii, MOBILE LINE IN THE ACCEPTOR PHOTOLUMINESCENCE SPECTRUM OF PURE GAAS, JETP letters, 65(1), 1997, pp. 86-90
ELECTRONIC-PROPERTIES OF GAAS BUFFER LAYERS GROWN BY MOLECULAR-BEAM EPITAXY AT GROWTH TEMPERATURES FROM 360-DEGREES-C TO 640-DEGREES-C
Authors: ZHURAVLEV KS PRINTS VY LUBYSHEV DI SEMYAGIN BR MIGAL VP GILINSKII AM
Citation: Ks. Zhuravlev et al., ELECTRONIC-PROPERTIES OF GAAS BUFFER LAYERS GROWN BY MOLECULAR-BEAM EPITAXY AT GROWTH TEMPERATURES FROM 360-DEGREES-C TO 640-DEGREES-C, Semiconductors, 28(11), 1994, pp. 1067-1072
PSEUDOMORPHOUS TENSED INGAASP FILMS WITH ELASTIC DEFORMATIONS OF 0.85-PERCENT AND WIDTH OF 0.1-0.3 MU-M PREPARED BY THE LIQUID-PHASE EPITAXY TECHNIQUE
Authors: BOLKHOVITYANOV YB GILINSKII AM NOMEROTSKII NV TRUKHANOV EM YAROSHEVICH AS
Citation: Yb. Bolkhovityanov et al., PSEUDOMORPHOUS TENSED INGAASP FILMS WITH ELASTIC DEFORMATIONS OF 0.85-PERCENT AND WIDTH OF 0.1-0.3 MU-M PREPARED BY THE LIQUID-PHASE EPITAXY TECHNIQUE, Pis'ma v Zurnal tehniceskoj fiziki, 19(13), 1993, pp. 5-8
Risultati: 1-4 |