Authors: GILMAN JMA BATCHELOR RA HAMNETT A

Citation: Jma. Gilman et al., SURFACE PROCESSES AT ELECTROLYTE HIGHLY DOPED SEMICONDUCTOR INTERFACES ANALYZED BY ELECTROREFLECTANCE MODELING, Journal of the Chemical Society. Faraday transactions, 89(11), 1993, pp. 1717-1722

Authors: GILMAN JMA ONEILL AG

Citation: Jma. Gilman et Ag. Oneill, MODELING OF RESONANT INTERBAND TUNNELING STRUCTURES AS BACK-BACK INTER-DIMENSIONAL ESAKI DIODES, Superlattices and microstructures, 14(2-3), 1993, pp. 129-136

Authors: GILMAN JMA HAMNETT A

Citation: Jma. Gilman et A. Hamnett, ELECTROREFLECTANCE MODELING OF LOW-FIELD DIELECTRIC CONTRIBUTIONS REQUIRING A BOLTZMANN MODEL OF CARRIER DENSITY, Semiconductor science and technology, 8(7), 1993, pp. 1475-1478

Authors: GILMAN JMA HUTTON R HAMNETT A PETER LM

Citation: Jma. Gilman et al., MODELING OF ELECTROLYTE ELECTROREFLECTANCE OF HEAVILY-DOPED N-TYPE GAAS, Physical review. B, Condensed matter, 47(20), 1993, pp. 13453-13462

Authors: GILMAN JMA ONEILL AG

Citation: Jma. Gilman et Ag. Oneill, DEVICE APPLICATIONS OF INTERBAND TUNNELING STRUCTURES WITH ONE, 2, AND 3 DIMENSIONS, Journal of applied physics, 74(1), 1993, pp. 351-358