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Results: 1-17 |
Results: 17
ION ENERGY EFFECTS ON SURFACE-CHEMISTRY AND DAMAGE IN A HIGH-DENSITY PLASMA ETCH PROCESS FOR GALLIUM-ARSENIDE
Authors: LEONHARDT D EDDY CR SHAMAMIAN VA HOLM RT GLEMBOCKI OJ THOMS DB KATZER DS BUTLER JE
Citation: D. Leonhardt et al., ION ENERGY EFFECTS ON SURFACE-CHEMISTRY AND DAMAGE IN A HIGH-DENSITY PLASMA ETCH PROCESS FOR GALLIUM-ARSENIDE, JPN J A P 2, 37(5B), 1998, pp. 577-579
SURFACE-CHEMISTRY AND DAMAGE IN THE HIGH-DENSITY PLASMA-ETCHING OF GALLIUM-ARSENIDE
Authors: LEONHARDT D EDDY CR SHAMAMIAN VA HOLM RT GLEMBOCKI OJ BUTLER JE
Citation: D. Leonhardt et al., SURFACE-CHEMISTRY AND DAMAGE IN THE HIGH-DENSITY PLASMA-ETCHING OF GALLIUM-ARSENIDE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1547-1551
OPTICAL-PROPERTIES OF LOW-DENSITY FOAMS CONSIDERED AS TARGETS FOR INERTIAL CONFINEMENT FUSION
Authors: GLEMBOCKI OJ REBBERT ML PROKES SM SETHIAN JD MARRIAN CRK CHAN LY
Citation: Oj. Glembocki et al., OPTICAL-PROPERTIES OF LOW-DENSITY FOAMS CONSIDERED AS TARGETS FOR INERTIAL CONFINEMENT FUSION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(1), 1998, pp. 50-56
ELECTRONIC-PROPERTIES OF GAAS-SURFACES ETCHED IN AN ELECTRON-CYCLOTRON-RESONANCE SOURCE AND CHEMICALLY PASSIVATED USING P2S5
Authors: GLEMBOCKI OJ TUCHMAN JA DAGATA JA KO KK PANG SW STUTZ CE
Citation: Oj. Glembocki et al., ELECTRONIC-PROPERTIES OF GAAS-SURFACES ETCHED IN AN ELECTRON-CYCLOTRON-RESONANCE SOURCE AND CHEMICALLY PASSIVATED USING P2S5, Applied physics letters, 73(1), 1998, pp. 114-116
GALLIUM-ARSENIDE SURFACE-CHEMISTRY AND SURFACE DAMAGE IN A CHLORINE HIGH-DENSITY PLASMA ETCH PROCESS
Authors: EDDY CR GLEMBOCKI OJ LEONHARDT D SHAMAMIAN VA HOLM RT THOMS BD BUTLER JE PANG SW
Citation: Cr. Eddy et al., GALLIUM-ARSENIDE SURFACE-CHEMISTRY AND SURFACE DAMAGE IN A CHLORINE HIGH-DENSITY PLASMA ETCH PROCESS, Journal of electronic materials, 26(11), 1997, pp. 1320-1325
LUMINESCENCE FROM POROUS SILICON - MECHANISM DEBATED
Authors: PROKES SM GLEMBOCKI OJ
Citation: Sm. Prokes et Oj. Glembocki, LUMINESCENCE FROM POROUS SILICON - MECHANISM DEBATED, Physics today, 50(8), 1997, pp. 83-83
ENHANCED CARRIER LIFETIMES AND SUPPRESSION OF MIDGAP STATES IN GAAS AT A MAGNETIC METAL INTERFACE
Authors: JONKER BT GLEMBOCKI OJ HOLM RT WAGNER RJ
Citation: Bt. Jonker et al., ENHANCED CARRIER LIFETIMES AND SUPPRESSION OF MIDGAP STATES IN GAAS AT A MAGNETIC METAL INTERFACE, Physical review letters, 79(24), 1997, pp. 4886-4889
ATHERMAL ANNEALING OF SILICON
Authors: GRUN J MANKA CK HOFFMAN CA MEYER JR GLEMBOCKI OJ KAPLAN R QADRI SB SKELTON EF DONNELLY D COVINGTON B
Citation: J. Grun et al., ATHERMAL ANNEALING OF SILICON, Physical review letters, 78(8), 1997, pp. 1584-1587
SCHOTTKY-BARRIER FORMATION FOR FE ON GAAS(001) AND THE ROLE OF INTERFACIAL STRUCTURE
Authors: JONKER BT KNEEDLER EM THIBADO P GLEMBOCKI OJ WHITMAN LJ BENNETT BR
Citation: Bt. Jonker et al., SCHOTTKY-BARRIER FORMATION FOR FE ON GAAS(001) AND THE ROLE OF INTERFACIAL STRUCTURE, Journal of applied physics, 81(8), 1997, pp. 4362-4362
REAL-TIME OBSERVATION OF SURFACE KINETICS DURING THE SELF-ASSEMBLY OFGA CHAINS ON SI(112)
Authors: GLEMBOCKI OJ PROKES SM
Citation: Oj. Glembocki et Sm. Prokes, REAL-TIME OBSERVATION OF SURFACE KINETICS DURING THE SELF-ASSEMBLY OFGA CHAINS ON SI(112), Applied physics letters, 71(16), 1997, pp. 2355-2357
ROLE OF INTERFACIAL OXIDE-RELATED DEFECTS IN THE RED-LIGHT EMISSION IN POROUS SILICON - REPLY
Authors: PROKES SM GLEMBOCKI OJ
Citation: Sm. Prokes et Oj. Glembocki, ROLE OF INTERFACIAL OXIDE-RELATED DEFECTS IN THE RED-LIGHT EMISSION IN POROUS SILICON - REPLY, Physical review. B, Condensed matter, 51(16), 1995, pp. 11183-11186
EFFECTS OF ELECTRON-CYCLOTRON-RESONANCE ETCHING ON THE AMBIENT (100) GAAS SURFACE
Authors: GLEMBOCKI OJ TUCHMAN JA KO KK PANG SW GIORDANA A KAPLAN R STUTZ CE
Citation: Oj. Glembocki et al., EFFECTS OF ELECTRON-CYCLOTRON-RESONANCE ETCHING ON THE AMBIENT (100) GAAS SURFACE, Applied physics letters, 66(22), 1995, pp. 3054-3056
DEFECT-BASED MODEL FOR ROOM-TEMPERATURE VISIBLE PHOTOLUMINESCENCE IN POROUS SILICON
Authors: PROKES SM CARLOS WE GLEMBOCKI OJ
Citation: Sm. Prokes et al., DEFECT-BASED MODEL FOR ROOM-TEMPERATURE VISIBLE PHOTOLUMINESCENCE IN POROUS SILICON, Physical review. B, Condensed matter, 50(23), 1994, pp. 17093-17096
ROLE OF INTERFACIAL OXIDE-RELATED DEFECTS IN THE RED-LIGHT EMISSION IN POROUS SILICON
Authors: PROKES SM GLEMBOCKI OJ
Citation: Sm. Prokes et Oj. Glembocki, ROLE OF INTERFACIAL OXIDE-RELATED DEFECTS IN THE RED-LIGHT EMISSION IN POROUS SILICON, Physical review. B, Condensed matter, 49(3), 1994, pp. 2238-2241
CHARACTERIZATION OF CRYSTALLINE LOW-TEMPERATURE GAAS-LAYERS ANNEALED FROM AN AMORPHOUS PHASE
Authors: GIORDANA A GLEMBOCKI OJ GLASER ER GASKILL DK KYONO CS TWIGG ME FATEMI M TADAYON B TADAYON S
Citation: A. Giordana et al., CHARACTERIZATION OF CRYSTALLINE LOW-TEMPERATURE GAAS-LAYERS ANNEALED FROM AN AMORPHOUS PHASE, Journal of electronic materials, 22(12), 1993, pp. 1391-1393
LIGHT-EMISSION PROPERTIES OF POROUS SILICON
Authors: PROKES SM GLEMBOCKI OJ
Citation: Sm. Prokes et Oj. Glembocki, LIGHT-EMISSION PROPERTIES OF POROUS SILICON, Materials chemistry and physics, 35(1), 1993, pp. 1-10
LUMINESCENCE AT THE POROUS SILICON ELECTROLYTE INTERFACE
Authors: SEARSON PC PROKES SM GLEMBOCKI OJ
Citation: Pc. Searson et al., LUMINESCENCE AT THE POROUS SILICON ELECTROLYTE INTERFACE, Journal of the Electrochemical Society, 140(11), 1993, pp. 3327-3331
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