CHARACTERIZATION OF CRYSTALLINE LOW-TEMPERATURE GAAS-LAYERS ANNEALED FROM AN AMORPHOUS PHASE

Authors
GIORDANA A GLEMBOCKI OJ GLASER ER GASKILL DK KYONO CS TWIGG ME FATEMI M TADAYON B TADAYON S
Citation
A. Giordana et al., CHARACTERIZATION OF CRYSTALLINE LOW-TEMPERATURE GAAS-LAYERS ANNEALED FROM AN AMORPHOUS PHASE, Journal of electronic materials, 22(12), 1993, pp. 1391-1393
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
22
Issue
12
Year of publication
1993
Pages
1391 - 1393
Database
ISI
SICI code
0361-5235(1993)22:12<1391:COCLGA>2.0.ZU;2-A
Abstract
The results from an in-depth characterization of as-grown and annealed low-temperature GaAs layers deposited at less than 260 degrees C are presented. The layers, amorphous as grown, became crystalline after an nealing. The crystallization was documented by several characterizatio n techniques including photoreflectance, Raman spectroscopy, photolumi nescence, transmission electron microscopy, and double-crystal x-ray d iffraction. The n-type conductivity of the annealed films was exploite d for the construction of a diode structure.