Citation: Dj. Godbey et Mg. Ancona, ANALYSIS OF GE SEGREGATION IN SI USING A SIMULTANEOUS GROWTH AND EXCHANGE MODEL, Surface science, 395(1), 1998, pp. 60-68
Citation: Dj. Godbey et Mg. Ancona, MODELING OF GE SEGREGATION IN THE LIMITS OF ZERO AND INFINITE SURFACE-DIFFUSION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 976-980
Authors:
HOBART KD
GODBEY DJ
TWIGG ME
FATEMI M
THOMPSON PE
Citation: Kd. Hobart et al., SURFACE SEGREGATION AND STRUCTURE OF SB-DOPED SI(100) FILMS GROWN AT LOW-TEMPERATURE BY MOLECULAR-BEAM EPITAXY, Surface science, 334(1-3), 1995, pp. 29-38
Authors:
GLASER ER
KENNEDY TA
KLEIN PB
GODBEY DJ
THOMPSON PE
Citation: Er. Glaser et al., TIME-RESOLVED OPTICALLY DETECTED MAGNETIC-RESONANCE OF LUMINESCENCE FROM SI SI1-XGEX SUPERLATTICES/, JPN J A P 1, 33(4B), 1994, pp. 2357-2360
Citation: Dj. Godbey et al., GE SURFACE SEGREGATION AT LOW-TEMPERATURE DURING SIGE GROWTH BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 65(6), 1994, pp. 711-713
Citation: Dj. Godbey et Mg. Ancona, CONCENTRATION-DEPENDENCE OF GE SEGREGATION DURING THE GROWTH OF A SIGE BURIED LAYER, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1392-1395
Authors:
STEINER TD
HENGEHOLD RL
YEO YK
GODBEY DJ
THOMPSON PE
POMRENKE GS
Citation: Td. Steiner et al., A STUDY OF BROAD-BAND PHOTOLUMINESCENCE FROM SI1-XGEX SI SUPERLATTICES/, Journal of crystal growth, 127(1-4), 1993, pp. 472-475
Authors:
HOBART KD
GODBEY DJ
THOMPSON PE
SIMONS DS
Citation: Kd. Hobart et al., SB SURFACE SEGREGATION AND DOPING IN SI(100) GROWN AT REDUCED TEMPERATURE BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 63(10), 1993, pp. 1381-1383