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Results:
1-15
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Results: 15
Authors:
GOESMANN F
STUDNITZKY T
SCHMIDFETZER R
Citation: F. Goesmann et al., EXPERIMENTAL-STUDY OF TERNARY PD-ZN-SE PHASE-EQUILIBRIA AND PD ZNSE BULK DIFFUSION/, Journal of phase equilibria, 19(1), 1998, pp. 19-24
Authors:
GOESMANN F
WENZEL R
SCHMIDFETZER R
Citation: F. Goesmann et al., METALLIZATION STUDIES ON TI3SIC2-BASED CONTACTS ON 6H-SIC, Journal of materials science. Materials in electronics, 9(2), 1998, pp. 103-107
Authors:
WENZEL R
GOESMANN F
SCHMIDFETZER R
Citation: R. Wenzel et al., DIFFUSION-BARRIERS IN GOLD-METALLIZED TITANIUM-BASED CONTACT STRUCTURES ON SIC, Journal of materials science. Materials in electronics, 9(2), 1998, pp. 109-113
Authors:
WENZEL R
GOESMANN F
SCHMIDFETZER R
Citation: R. Wenzel et al., BULK DIFFUSION STUDIES OF METALLIZATIONS ON TITANIUM-BASED CONTACTS AT 600-DEGREES-C, Materials science & engineering. B, Solid-state materials for advanced technology, 52(2-3), 1998, pp. 175-179
Authors:
GOESMANN F
MOLLE M
STUDNITZKY T
SCHMIDFETZER R
Citation: F. Goesmann et al., INTERFACE REACTIONS AND ELECTRICAL-PROPERTIES OF METAL CONTACTS (TI, IN, AU, W) ON P-ZNSE, Semiconductor science and technology, 13(2), 1998, pp. 236-240
Authors:
SCHWARZ R
STUDNITZKY T
GOESMANN F
SCHMIDFETZER R
Citation: R. Schwarz et al., OHMIC CONTACTS TO P-ZNSE USING PD METALLIZATION, Solid-state electronics, 42(1), 1998, pp. 139-144
Authors:
GOESMANN F
STUDNITZKY T
SCHMIDFETZER R
PISCH A
Citation: F. Goesmann et al., PALLADIUM THIN-FILM CONTACTS ON P-TYPE ZNSE - ADJUSTMENT OF ELECTRICAL-PROPERTIES BY REACTION-DIFFUSION, Journal of crystal growth, 185, 1998, pp. 406-410
Authors:
GOESMANN F
WENZEL R
SCHMIDFETZER R
Citation: F. Goesmann et al., PREPARATION OF TI3SIC2 BY ELECTRON-BEAM-IGNITED SOLID-STATE REACTION, Journal of the American Ceramic Society, 81(11), 1998, pp. 3025-3028
Authors:
SCHWARZ R
MOLLE M
STUDNITZKY T
GOESMANN F
SCHMIDFETZER R
Citation: R. Schwarz et al., EXPERIMENTAL-STUDY OF TERNARY M-ZN-SE (M=W, AU, IN, TI) PHASE-EQUILIBRIA, Journal of alloys and compounds, 247, 1997, pp. 158-163
Authors:
GOESMANN F
SCHMIDFETZER R
Citation: F. Goesmann et R. Schmidfetzer, METALS ON 6H-SIC - CONTACT FORMATION FROM THE MATERIALS SCIENCE POINT-OF-VIEW, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 357-362
Authors:
GOESMANN F
SCHMIDFETZER R
Citation: F. Goesmann et R. Schmidfetzer, TEMPERATURE-DEPENDENT INTERFACE REACTIONS AND ELECTRICAL CONTACT PROPERTIES OF TITANIUM ON 6H-SIC (VOL 10, PG 1652, 1995), Semiconductor science and technology, 11(3), 1996, pp. 461-461
Authors:
JONES DI
GOESMANN F
Citation: Di. Jones et F. Goesmann, PHOTO-THERMOELECTRIC POWER OF A-SI AS A FUNCTION OF INCIDENT WAVELENGTH, Journal of non-crystalline solids, 200, 1996, pp. 210-213
Authors:
GOESMANN F
SCHMIDFETZER R
Citation: F. Goesmann et R. Schmidfetzer, STABILITY OF W AS ELECTRICAL CONTACT ON 6H-SIC - PHASE-RELATIONS AND INTERFACE REACTIONS IN THE TERNARY-SYSTEM W-SI-C, Materials science & engineering. B, Solid-state materials for advanced technology, 34(2-3), 1995, pp. 224-231
Authors:
GOESMANN F
SCHMIDFETZER R
Citation: F. Goesmann et R. Schmidfetzer, TEMPERATURE-DEPENDENT INTERFACE REACTIONS AND ELECTRICAL CONTACT PROPERTIES OF TITANIUM ON 6H-SIC, Semiconductor science and technology, 10(12), 1995, pp. 1652-1658
Authors:
GOESMANN F
JONES DI
Citation: F. Goesmann et Di. Jones, THERMOELECTRIC-POWER OF AMORPHOUS-SILICON UNDER ILLUMINATION, Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties, 69(2), 1994, pp. 159-167
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