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Citation: J. Vertommen et Am. Goethals, DRY DEVELOPMENT FOR 0.25 MU-M TOP SURFACE IMAGING, Journal of the Electrochemical Society, 144(7), 1997, pp. 2461-2467

Authors: VANDRIESSCHE V GOETHALS AM DEBEECK MO RONSE K VANDENHOVE L

Citation: V. Vandriessche et al., DUV LITHOGRAPHY FOR 0.35-MU-M CMOS PROCESSING, Microelectronic engineering, 27(1-4), 1995, pp. 243-246

Authors: GOGOLIDES E TZEVELEKIS D TSOI E HATZAKIS M GOETHALS AM BAIK KH VANROEY F

Citation: E. Gogolides et al., QUARTER-MICRON LITHOGRAPHY WITH A WET-SILYLATED AND DRY-DEVELOPED COMMERCIAL PHOTORESIST, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3914-3918

Authors: GOETHALS AM BAIK KH RONSE K VANDENHOVE L ROLAND B

Citation: Am. Goethals et al., STABILITY OF SILYLATED IMAGES FOR APPLICATION TO DRY DEVELOPABLE DEEP-UV LITHOGRAPHY, Microelectronic engineering, 21(1-4), 1993, pp. 239-244