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Results: 1-7 |
Results: 7
KINETICS OF ION DEPOLARIZATION OF SI-MOS STRUCTURES IN THE LINEAR VOLTAGE SWEEP REGIME
Authors: ZHDAN AG GOLDMAN EI CHUCHEVA GV
Citation: Ag. Zhdan et al., KINETICS OF ION DEPOLARIZATION OF SI-MOS STRUCTURES IN THE LINEAR VOLTAGE SWEEP REGIME, Semiconductors, 31(12), 1997, pp. 1268-1272
ION TRANSFER PROCESSES IN AN INSULATING LAYER CONTAINING TRAPS
Authors: GOLDMAN EI
Citation: Ei. Goldman, ION TRANSFER PROCESSES IN AN INSULATING LAYER CONTAINING TRAPS, Semiconductors, 31(1), 1997, pp. 36-40
DETERMINATION OF THE COEFFICIENTS OF ION TRANSFER IN INSULATING LAYERS ON THE SURFACE OF SEMICONDUCTORS USING DYNAMIC CURRENT-VOLTAGE DEPOLARIZATION CHARACTERISTICS
Authors: GOLDMAN EI ZHDAN AG CHUCHEVA GV
Citation: Ei. Goldman et al., DETERMINATION OF THE COEFFICIENTS OF ION TRANSFER IN INSULATING LAYERS ON THE SURFACE OF SEMICONDUCTORS USING DYNAMIC CURRENT-VOLTAGE DEPOLARIZATION CHARACTERISTICS, Instruments and experimental techniques, 40(6), 1997, pp. 841-846
GENERATION OF ELECTRON-HOLE PAIRS AT THE SURFACE OF A SEMICONDUCTOR IN THE FRINGING FIELDS OF MACROSCOPIC CHARGED CLUSTERS - EFFECTS OF ELECTRICAL INHOMOGENEITIES OF VARIOUS LENGTH SCALES
Authors: GOLDMAN EI ZHDAN AG
Citation: Ei. Goldman et Ag. Zhdan, GENERATION OF ELECTRON-HOLE PAIRS AT THE SURFACE OF A SEMICONDUCTOR IN THE FRINGING FIELDS OF MACROSCOPIC CHARGED CLUSTERS - EFFECTS OF ELECTRICAL INHOMOGENEITIES OF VARIOUS LENGTH SCALES, Semiconductors, 29(3), 1995, pp. 219-224
RESERVOIR EFFECT IN THE THERMAL DELOCALIZATION OF CARRIERS NEAR A SILICON-OXIDE INTERFACE
Authors: GOLDMAN EI ZHDAN AG PONOMAREV AN
Citation: Ei. Goldman et al., RESERVOIR EFFECT IN THE THERMAL DELOCALIZATION OF CARRIERS NEAR A SILICON-OXIDE INTERFACE, Semiconductors, 28(11), 1994, pp. 1073-1079
GENERATION OF MINORITY-CARRIERS IN ELECTRIC-FIELDS OF MACROSCOPIC INHOMOGENEITIES AT THE SEMICONDUCTOR-INSULATOR INTERFACE
Authors: GOLDMAN EI
Citation: Ei. Goldman, GENERATION OF MINORITY-CARRIERS IN ELECTRIC-FIELDS OF MACROSCOPIC INHOMOGENEITIES AT THE SEMICONDUCTOR-INSULATOR INTERFACE, Semiconductors, 27(2), 1993, pp. 150-153
FRANZ-KELDYSH EFFECT IN THE ELECTRIC-FIELDS OF MACROSCOPIC IRREGULARITIES AT A SEMICONDUCTOR SURFACE
Authors: GOLDMAN EI ZHDAN AG SUMAROKA AM
Citation: Ei. Goldman et al., FRANZ-KELDYSH EFFECT IN THE ELECTRIC-FIELDS OF MACROSCOPIC IRREGULARITIES AT A SEMICONDUCTOR SURFACE, JETP letters, 57(12), 1993, pp. 797-801
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