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Results: 1-25 | 26-36 |
Results: 26-36/36
EFFECT OF SUBSTRATE MISCUT ON THE STRUCTURAL-PROPERTIES OF INGAAS LINEAR GRADED BUFFER LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS
Authors: ELDREDGE JW MATNEY KM GOORSKY MS CHUI HC HARRIS JS
Citation: Jw. Eldredge et al., EFFECT OF SUBSTRATE MISCUT ON THE STRUCTURAL-PROPERTIES OF INGAAS LINEAR GRADED BUFFER LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 689-691
DIFFUSE-X-RAY SCATTERING FROM MISFIT DISLOCATIONS AT SEMICONDUCTOR HETEROINTERFACES
Authors: GOORSKY MS MESHKINPOUR M STREIT DC BLOCK TR
Citation: Ms. Goorsky et al., DIFFUSE-X-RAY SCATTERING FROM MISFIT DISLOCATIONS AT SEMICONDUCTOR HETEROINTERFACES, Journal of physics. D, Applied physics, 28(4A), 1995, pp. 92-96
RELAXED SI1-XGEX FILMS WITH REDUCED DISLOCATION DENSITIES GROWN BY MOLECULAR-BEAM EPITAXY
Authors: TANNER MO CHU MA WANG KL MESHKINPOUR M GOORSKY MS
Citation: Mo. Tanner et al., RELAXED SI1-XGEX FILMS WITH REDUCED DISLOCATION DENSITIES GROWN BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 157(1-4), 1995, pp. 121-125
DETERMINING PERIOD VARIATIONS IN A DISTRIBUTED-BRAGG-REFLECTOR THROUGH HIGH-RESOLUTION X-RAY-ANALYSIS
Authors: MATNEY K GOORSKY MS
Citation: K. Matney et Ms. Goorsky, DETERMINING PERIOD VARIATIONS IN A DISTRIBUTED-BRAGG-REFLECTOR THROUGH HIGH-RESOLUTION X-RAY-ANALYSIS, Journal of crystal growth, 148(4), 1995, pp. 327-335
ROLE OF MISFIT DISLOCATIONS ON PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTORS
Authors: MESHKINPOUR M GOORSKY MS CHU G STREIT DC BLOCK TR WOJTOWICZ M
Citation: M. Meshkinpour et al., ROLE OF MISFIT DISLOCATIONS ON PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTORS, Applied physics letters, 66(6), 1995, pp. 748-750
REDUCTION OF THE BULK ABSORPTION-COEFFICIENT IN SILICON OPTICS FOR HIGH-ENERGY LASERS THROUGH DEFECT ENGINEERING
Authors: GOODMAN WA GOORSKY MS
Citation: Wa. Goodman et Ms. Goorsky, REDUCTION OF THE BULK ABSORPTION-COEFFICIENT IN SILICON OPTICS FOR HIGH-ENERGY LASERS THROUGH DEFECT ENGINEERING, Applied optics, 34(18), 1995, pp. 3367-3373
STRUCTURAL-PROPERTIES OF HIGHLY MISMATCHED INGAAS-BASED DEVICES GROWNBY MOLECULAR-BEAM EPITAXY ON GAAS SUBSTRATES
Authors: GOORSKY MS ELDREDGE JW LORD SM HARRIS JS
Citation: Ms. Goorsky et al., STRUCTURAL-PROPERTIES OF HIGHLY MISMATCHED INGAAS-BASED DEVICES GROWNBY MOLECULAR-BEAM EPITAXY ON GAAS SUBSTRATES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 1034-1037
CHARACTERIZATION OF BURIED PSEUDOMORPHIC INGAAS LAYERS USING HIGH-RESOLUTION X-RAY-DIFFRACTION
Authors: MESHKINPOUR M GOORSKY MS MATNEY KM STREIT DC BLOCK TR
Citation: M. Meshkinpour et al., CHARACTERIZATION OF BURIED PSEUDOMORPHIC INGAAS LAYERS USING HIGH-RESOLUTION X-RAY-DIFFRACTION, Journal of applied physics, 76(6), 1994, pp. 3362-3366
STRAIN AND MOSAIC SPREAD OF CARBON AND GALLIUM CO-IMPLANTED GAAS
Authors: HORNG ST GOORSKY MS MADOK JH HAEGEL NM
Citation: St. Horng et al., STRAIN AND MOSAIC SPREAD OF CARBON AND GALLIUM CO-IMPLANTED GAAS, Journal of applied physics, 76(4), 1994, pp. 2066-2069
CORRELATION OF INTERFACE RECOMBINATION AND DISLOCATION DENSITY AT GAINP GAAS HETEROJUNCTIONS/
Authors: MULLENBORN M MATNEY K GOORSKY MS HAEGEL NM VERNON SM
Citation: M. Mullenborn et al., CORRELATION OF INTERFACE RECOMBINATION AND DISLOCATION DENSITY AT GAINP GAAS HETEROJUNCTIONS/, Journal of applied physics, 75(5), 1994, pp. 2418-2420
HIGH-RESOLUTION X-RAY-DIFFRACTION FOR GE COMPOSITION PROFILE DETERMINATION IN SI SI1-XGEX HETEROSTRUCTURES/
Authors: GOORSKY MS HORNG ST WANG PJ
Citation: Ms. Goorsky et al., HIGH-RESOLUTION X-RAY-DIFFRACTION FOR GE COMPOSITION PROFILE DETERMINATION IN SI SI1-XGEX HETEROSTRUCTURES/, Journal of the Electrochemical Society, 140(11), 1993, pp. 3262-3267
Risultati: 1-25 | 26-36 |