Citation: D. Quon et al., HOT-CARRIER-INDUCED BIPOLAR-TRANSISTOR DEGRADATION DUE TO BASE DOPANTCOMPENSATION BY HYDROGEN - THEORY AND EXPERIMENT, I.E.E.E. transactions on electron devices, 41(10), 1994, pp. 1824-1830
Authors:
GOPI PK
LI GP
SONEK GJ
DUNKLEY J
HANNAMAN D
PATTERSON J
WILLARD S
Citation: Pk. Gopi et al., NEW DEGRADATION MECHANISM ASSOCIATED WITH HYDROGEN IN BIPOLAR-TRANSISTORS UNDER HOT-CARRIER STRESS, Applied physics letters, 63(9), 1993, pp. 1237-1239