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Results: 1-11 |
Results: 11
OBSERVATION OF LOW-TEMPERATURE DIFFUSION OF ALUMINUM IMPURITY ATOMS IN HYDROGEN-IMPLANTED SILICON
Authors: GORELKINSKII YV MUKASHEV BN ABDULLIN KA
Citation: Yv. Gorelkinskii et al., OBSERVATION OF LOW-TEMPERATURE DIFFUSION OF ALUMINUM IMPURITY ATOMS IN HYDROGEN-IMPLANTED SILICON, Semiconductors, 32(4), 1998, pp. 375-381
SELF-INTERSTITIALS IN SILICON IRRADIATED WITH LIGHT-IONS
Authors: MUKASHEV BN ABDULLIN KA GORELKINSKII YV
Citation: Bn. Mukashev et al., SELF-INTERSTITIALS IN SILICON IRRADIATED WITH LIGHT-IONS, Physica status solidi. a, Applied research, 168(1), 1998, pp. 73-85
AL-AL PAIR IN SILICON - EVIDENCE FOR LONG-RANGE HYDROGEN-ENHANCED ALUMINUM MIGRATION
Authors: ABDULLIN KA MUKASHEV BN GORELKINSKII YV
Citation: Ka. Abdullin et al., AL-AL PAIR IN SILICON - EVIDENCE FOR LONG-RANGE HYDROGEN-ENHANCED ALUMINUM MIGRATION, Applied physics letters, 71(12), 1997, pp. 1703-1705
NEW OXYGEN-RELATED EPR-SPECTRA IN PROTON-IRRADIATED SILICON
Authors: ABDULLIN KA MUKASHEV BN MAKHOV AM GORELKINSKII YV
Citation: Ka. Abdullin et al., NEW OXYGEN-RELATED EPR-SPECTRA IN PROTON-IRRADIATED SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 77-80
EPR OF INTERSTITIAL HYDROGEN IN SILICON - UNIAXIAL-STRESS EXPERIMENTS
Authors: GORELKINSKII YV NEVINNYI NN
Citation: Yv. Gorelkinskii et Nn. Nevinnyi, EPR OF INTERSTITIAL HYDROGEN IN SILICON - UNIAXIAL-STRESS EXPERIMENTS, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 133-137
IDENTIFICATION OF INTERSTITIAL SELF-COMPL EX IN SILICON BY EPR TECHNIQUE
Authors: TOZHIBAEV GO MAKHKAMOV SM GORELKINSKII YV TURSUNOV NA MAKHOV MA
Citation: Go. Tozhibaev et al., IDENTIFICATION OF INTERSTITIAL SELF-COMPL EX IN SILICON BY EPR TECHNIQUE, Fizika tverdogo tela, 38(4), 1996, pp. 987-992
METASTABLE OXYGEN-SILICON INTERSTITIAL COMPLEX IN CRYSTALLINE SILICON
Authors: ABDULLIN KA MUKASHEV BN GORELKINSKII YV
Citation: Ka. Abdullin et al., METASTABLE OXYGEN-SILICON INTERSTITIAL COMPLEX IN CRYSTALLINE SILICON, Semiconductor science and technology, 11(11), 1996, pp. 1696-1703
BISTABLE OXYGEN-CONTAINING INTERSTITIAL C OMPLEX IN SILICON
Authors: ABDULLIN KA MUKASHEV BN GORELKINSKII YV
Citation: Ka. Abdullin et al., BISTABLE OXYGEN-CONTAINING INTERSTITIAL C OMPLEX IN SILICON, Pis'ma v Zurnal tehniceskoj fiziki, 21(24), 1995, pp. 32-37
HYDROGEN TRANSPORT IN SUBMICRON SIO2-FILMS ON SI
Authors: GORELKINSKII YV NEVINNYI NN LYUTS EA
Citation: Yv. Gorelkinskii et al., HYDROGEN TRANSPORT IN SUBMICRON SIO2-FILMS ON SI, Semiconductors, 28(1), 1994, pp. 23-26
ELECTRON-PARAMAGNETIC-RESONANCE STUDY OF THE NL51 SPECTRUM IN HYDROGEN-IMPLANTED SILICON
Authors: STALLINGA P GREGORKIEWICZ T AMMERLAAN CAJ GORELKINSKII YV
Citation: P. Stallinga et al., ELECTRON-PARAMAGNETIC-RESONANCE STUDY OF THE NL51 SPECTRUM IN HYDROGEN-IMPLANTED SILICON, Solid state communications, 90(6), 1994, pp. 401-404
ELECTRON-PARAMAGNETIC-RESONANCE OF MOLECULAR-HYDROGEN IN SILICON
Authors: STALLINGA P GREGORKIEWICZ T AMMERLAAN CAJ GORELKINSKII YV
Citation: P. Stallinga et al., ELECTRON-PARAMAGNETIC-RESONANCE OF MOLECULAR-HYDROGEN IN SILICON, Physical review letters, 71(1), 1993, pp. 117-120
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