ACNP - Italian Periodicals Catalogue

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Results: 1-9 |

Results: 9

INHOMOGENEOUS STRAIN RELAXATION IN ETCHED QUANTUM DOTS AND WIRES - FROM STRAIN DISTRIBUTIONS TO PIEZOELECTRIC FIELDS AND BAND-EDGE PROFILES

Authors: NIQUET YM PRIESTER C GOURGON C MARIETTE H

Citation: Ym. Niquet et al., INHOMOGENEOUS STRAIN RELAXATION IN ETCHED QUANTUM DOTS AND WIRES - FROM STRAIN DISTRIBUTIONS TO PIEZOELECTRIC FIELDS AND BAND-EDGE PROFILES, Physical review. B, Condensed matter, 57(23), 1998, pp. 14850-14859

INFLUENCE OF INHOMOGENEOUS STRAIN RELAXATION ON THE PHOTOLUMINESCENCEOF II-VI NANOSTRUCTURES

Authors: NIQUET YM GOURGON C DANG LS MARIETTE H PRIESTER C VIEU C STRAUB H BRUNTHALER G DARHUBER A GRILL T FASCHINGER W BAUER G

Citation: Ym. Niquet et al., INFLUENCE OF INHOMOGENEOUS STRAIN RELAXATION ON THE PHOTOLUMINESCENCEOF II-VI NANOSTRUCTURES, Journal of crystal growth, 185, 1998, pp. 334-338

EXCITONS IN CDTE QUANTUM WIRES WITH STRAIN-INDUCED LATERAL CONFINEMENT

Authors: BRINKMANN D FISHMAN G GOURGON C SIDANG L LOFFLER A MARIETTE H

Citation: D. Brinkmann et al., EXCITONS IN CDTE QUANTUM WIRES WITH STRAIN-INDUCED LATERAL CONFINEMENT, Physical review. B, Condensed matter, 54(3), 1996, pp. 1872-1876

CDTE QUANTUM WIRES ACHIEVED BY STRAIN-INDUCED LATERAL CONFINEMENT

Authors: MARIETTE H BRINKMANN D FISHMAN G GOURGON C DANG LS LOFFLER A

Citation: H. Mariette et al., CDTE QUANTUM WIRES ACHIEVED BY STRAIN-INDUCED LATERAL CONFINEMENT, Journal of crystal growth, 159(1-4), 1996, pp. 418-424

ANISOTROPIC CENTER-OF-MASS QUANTIZATION OF EXCITONS IN CDTE CDZNTE QUANTUM-WELLS/

Authors: GOURGON C DANG LS MARIETTE H

Citation: C. Gourgon et al., ANISOTROPIC CENTER-OF-MASS QUANTIZATION OF EXCITONS IN CDTE CDZNTE QUANTUM-WELLS/, Journal of crystal growth, 159(1-4), 1996, pp. 537-541

OPTICAL-PROPERTIES OF CDTE CDZNTE WIRES AND DOTS FABRICATED BY A FINAL ANODIC-OXIDATION ETCHING/

Authors: GOURGON C DANG LS MARIETTE H VIEU C MULLER F

Citation: C. Gourgon et al., OPTICAL-PROPERTIES OF CDTE CDZNTE WIRES AND DOTS FABRICATED BY A FINAL ANODIC-OXIDATION ETCHING/, Applied physics letters, 66(13), 1995, pp. 1635-1637

OPTICAL STUDY OF II-VI SEMICONDUCTOR NANOSTRUCTURES

Authors: DANG LS GOURGON C MAGNEA N MARIETTE H VIEU C

Citation: Ls. Dang et al., OPTICAL STUDY OF II-VI SEMICONDUCTOR NANOSTRUCTURES, Semiconductor science and technology, 9(11), 1994, pp. 1953-1958

PHOTOLUMINESCENCE OF CDTE ZNTE SEMICONDUCTOR WIRES AND DOTS/

Authors: GOURGON C ERIKSSON B DANG LS MARIETTE H VIEU C

Citation: C. Gourgon et al., PHOTOLUMINESCENCE OF CDTE ZNTE SEMICONDUCTOR WIRES AND DOTS/, Journal of crystal growth, 138(1-4), 1994, pp. 590-594

OPTICAL CHARACTERIZATION OF CDTE ZNTE SEMICONDUCTOR WIRES AND DOTS/

Authors: GOURGON C ERIKSSON B DANG LS MARIETTE H VIEU C

Citation: C. Gourgon et al., OPTICAL CHARACTERIZATION OF CDTE ZNTE SEMICONDUCTOR WIRES AND DOTS/, Journal de physique. IV, 3(C5), 1993, pp. 147-150

Risultati: 1-9 |